Diodes MMDT3904 - Manual (Page 2)

MMDT3904
Document number: DS30088 Rev. 15 - 2
2 of 5
www.diodes.com
April 2013
© Diodes Incorporated
MMDT3904
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
60 V
Collector-Emitter Voltage V
CEO
40 V
Emitter-Base Voltage V
EBO
6.0 V
Continuous Collector Current I
C
200 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) P
D
200 mW
Thermal Resistance, Junction to Ambient (Note 5) R
θJA
625 C/W
Operating and Storage and Temperature Range T
J
, T
STG
-55 to +150 C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
60  V I
C
= 100µA, I
E
= 0
Collector-Emitter Breakdown Voltage (Note 6) BV
CEO
40  V I
C
= 10.0mA, I
B
= 0
Emitter-Base Breakdown Voltage BV
EBO
6.0  V I
E
= 100µA, I
C
= 0
Collector-Base Cutoff Current I
CBO
 50 nA V
CB
= 50V
Collector-Emitter Cutoff Current I
CEV

50
nA
V
CE
= 40V, V
BE(OFF)
= 3.0V
50 V
CE
= 40V, V
BE(ON)
= 0.25V
Emitter-Base Cutoff Current I
EBO
 50 nA V
EB
= 5V
ON CHARACTERISTICS (Note 6)
DC Current Gain h
FE
40
70
100
60
30


300



I
C
= 100µA, V
CE
= 1.0V
I
C
= 1.0mA, V
CE
= 1.0V
I
C
= 10mA, V
CE
= 1.0V
I
C
= 50mA, V
CE
= 1.0V
I
C
= 100mA, V
CE
= 1.0V
Collector-Emitter Saturation Voltage V
CE(sat)

0.20
0.30
V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage V
BE(sat)
0.65

0.85
0.95
V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
 4.0 pF V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
Input Capacitance C
ibo
 8.0 pF V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Input Impedance h
ie
1.0 10 k 
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
Voltage Feedback Ratio h
re
0.5 8.0 x 10 -4
Small Signal Current Gain h
fe
100 400 
Output Admittance h
oe
1.0 40 µS
Current Gain-Bandwidth Product f
T
300  MHz
V
CE
= 20V, I
C
= 10mA,
f = 100MHz
Noise Figure NF  5.0 dB
V
CE
= 5.0V, I
C
= 100 A,
R
S
= 1.0k  f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
t
d
 35 ns V
CC
= 3.0V, I
C
= 10mA,
V
BE(off)
= - 0.5V, I
B1
= 1.0mA Rise Time t
r
 35 ns
Storage Time t
s
 200 ns V
CC
= 3.0V, I
C
= 10mA,
I
B1
= I
B2
= 1.0mA Fall Time t
f
 50 ns
Notes: 5. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device
is measured when operating in a steady-state condition.
6. Short duration pulse test used to minimize self-heating effect.