Diodes MMDT3906VC - Manual (Page 2)

DS30640 Rev. 3 - 2 2 of 4 MMDT3906VC
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Electrical Characteristics @ T
A
= 25 ° C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage V (BR)CBO -40  V I
C
= -10
µ
A, I
E
= 0
Collector-Emitter Breakdown Voltage V
(BR)CEO -40

V I
C
= -1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage V
(BR)EBO -5.0

V I
E
= -10
µ
A, I
C
= 0
Collector Cutoff Current I
CEX

-50 nA V
CE
= -30V, V
EB(OFF)
= -3.0V
Base Cutoff Current I
BL

-50 nA V
CE
= -30V, V
EB(OFF)
= -3.0V
ON CHARACTERISTICS (Note 5)
DC Current Gain h
FE
60
80
100
60
30


300



I
C
= -100µA, V
CE
= -1.0V
I
C
= -1.0mA, V
CE
= -1.0V
I
C
= -10mA, V
CE
= -1.0V
I
C
= -50mA, V
CE
= -1.0V
I
C
= -100mA, V
CE
= -1.0V
Collector-Emitter Saturation Voltage V
CE(SAT)
 -0.25
-0.40
V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage V
BE(SAT)
-0.65

-0.85
-0.95
V
I C = -10mA, I B = -1.0mA
I
C
= -50mA, I
B
= -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance C
obo

4.5 pF V CB = -5.0V, f = 1.0MHz, I E = 0
Input Capacitance C ibo
 10 pF V
EB
= -0.5V, f = 1.0MHz, I
C
= 0
Input Impedance h
ie 2.0 12 k
Ω
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
Voltage Feedback Ratio h
re
0.1 10 x 10 -4
Small Signal Current Gain h
fe 100 400

Output Admittance h
oe 3.0 60
µ
S
Current Gain-Bandwidth Product f
T
250  MHz
V
CE
= -20V, I
C
= -10mA,
f = 100MHz
Noise Figure NF

4.0 dB
V
CE
= -5.0V, I
C
= -100
µ
A,
R
S
= 1.0k Ω, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time t
d
 35 ns V
CC
= -3.0V, I
C
= -10mA,
V BE(off) = 0.5V, I B1 = -1.0mA
Rise Time t
r

35 ns
Storage Time t s
 225 ns V
CC
= -3.0V, I
C
= -10mA,
I
B1
= I
B2
= -1.0mA
Fall Time t
f

75 ns
Notes: 5. Short duration test pulse used to minimize self-heating.
T
C
U
D
O
R
P
W
E
N