Mmst4403, Maximum ratings, Electrical characteristics – Diodes MMST4403 User Manual
Page 2
MMST4403
Datasheet number: DS30083 Rev. 8 - 2
2 of 5
June 2011
© Diodes Incorporated
MMST4403
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
-40
V
Collector-Emitter Voltage
V
CEO
-40
V
Emitter-Base Voltage
V
EBO
-5.0
V
Collector Current – Continuous (Note 4)
I
C
-600
mA
Power Dissipation (Note 4)
P
d
200
mW
Thermal Resistance, Junction to Ambient (Note 4)
R
θJA
625
K/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
Notes:
4. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch;
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
V
(BR)CBO
-40
⎯
V
I
C
= -100
μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
-40
⎯
V
I
C
= -1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
-5.0
⎯
V
I
E
= -100
μA, I
C
= 0
Collector Cutoff Current
I
CEX
⎯
-100
nA
V
CE
= -35V, V
EB(OFF)
= -0.4V
Base Cutoff Current
I
BL
⎯
-100
nA
V
CE
= -35V, V
EB(OFF)
= -0.4V
ON CHARACTERISTICS (Note 5)
DC Current Gain
h
FE
30
60
100
100
20
⎯
⎯
⎯
300
⎯
⎯
I
C
= -100
μA, V
CE
= -1.0V
I
C
= -1.0mA, V
CE
= -1.0V
I
C
= -10mA, V
CE
= -1.0V
I
C
= -150mA, V
CE
= -2.0V
I
C
= -500mA, V
CE
= -2.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
-0.40
-0.75
V
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
Base-Emitter Saturation Voltage
V
BE(SAT)
-0.75
⎯
-0.95
-1.30
V
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
ob
⎯
8.5
pF
V
CB
= -10V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
eb
⎯
30
pF
V
EB
= -0.5V, f = 1.0MHz, I
C
= 0
Input Impedance
h
ie
1.5
15
k
Ω
V
CE
= -10V, I
C
= -1.0mA,
f = 1.0MHz
Voltage Feedback Ratio
h
re
0.1
8.0
x 10
-4
Small Signal Current Gain
h
fe
60
500
⎯
Output Admittance
h
oe
1.0
100
μS
Current Gain-Bandwith Product
f
T
200
⎯
MHz
V
CE
= -10V, I
C
= -20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time
t
d
⎯
15
ns
V
CE
= -30V, I
C
= -150mA,
V
BE(OFF)
= -2.0V, I
B1
= -15mA
Rise Time
t
r
⎯
20
ns
Storage Time
t
s
⎯
225
ns
V
CE
= -30V, I
C
= -150mA,
I
B1
= I
B2
= -15mA
Fall Time
t
r
⎯
30
ns
Notes:
5. Short duration pulse test used to minimize self-heating effect