Diodes ZXTP2041F - Manual (Page 4)

ZXTP2041F
Da
tasheet Number: DS33721 Rev. 7 - 2
4 of 7
www.diodes.com
December 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTP2041F
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ. Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
-40 - - V I
C
= -100µA
Collector-Emitter Breakdown Voltage (Note 9) BV
CEO
-40 - - V I
C
= -10mA
Emitter-Base Breakdown Voltage BV
EBO
-7 - - V I
E
= -100µA
Collector Cutoff Current I
CBO
- - -100 nA V
CB
= -30V
Emitter Cutoff Current I
EBO
- - -100 nA V
EB
= -5.6V
Emitter Cutoff Current I
CES
- - -100 nA V
CE
= -30V
DC current transfer Static ratio (Note 9) h
FE
300 - -
-
I
C
= -1mA, V
CE
= -5V
300 - 800 I
C
= -100mA, V
CE
= -5V
250 - - I
C
= -500mA, V
CE
= -5V
160 - - I
C
= -1A, V
CE
= -5V
30 - - I
C
= -2A, V
CE
= -5V
Collector-Emitter Saturation Voltage (Note 9) V
CE(sat)
- - -200
mV
I
C
= -100mA, I
B
= -1mA
- - -350 I
C
= -500mA, I
B
= -20mA
- - -500 I
C
= -1A, I
B
= -100mA
Base-Emitter Saturation Voltage (Note 9) V
BE(sat)
- - -1.1 V I
C
= -1A, I
B
= -100mA
Base-Emitter Turn-on Voltage (Note 9) V
BE(on)
- - -1.0 V I
C
= -1A, V
CE
= -5V
Transitional Frequency f
T
150 300 - MHz
I
C
= -50mA, V
CE
= -10V,
f = 100MHz
Output capacitance C
obo
- - 10 pF V
CB
= -10V, f = 1MHz,
Switching Time
Delay Time t
(d)
- 34.9 -
ns
V
CC
= -10V, I
C
= -500mA,
I
B1
= -I
B2
=-25mA
Rise Time t
(r)
- 19.2 -
Storage Time t
(s)
- 249 -
Fall Time t
(f)
- 62 -
Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤2%.