Diodes MMBTA56 - Manual

MMBTA55 / MMBTA56
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
•
Epitaxial Planar Die Construction
• Complementary NPN Types Available (MMBTA05 /
MMBTA06)
• Ideal for Low Power Amplification and Switching
• Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
Case: SOT-23
•
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020d
•
Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
• MMBTA55 Marking (See Page 3): K2H, K2G
•
MMBTA56 Marking (See Page 3): K2G
•
Ordering Information: See Page 3
•
Weight: 0.008 grams (approximate)
SOT-23
Dim Min Max
A 0.37 0.51
B 1.20 1.40
C 2.30 2.50
D 0.89 1.03
E 0.45 0.60
G 1.78 2.05
H 2.80 3.00
J 0.013 0.10
K 0.903 1.10
L 0.45 0.61
M 0.085 0.180
α
0
°
8
°
All Dimensions in mm
A
E
J
L
TOP VIEW
M
B C
C
B E
H
G
D
K
E B
C
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol MMBTA55 MMBTA56 Unit
Collector-Base Voltage V
CBO
-60 -80 V
Collector-Emitter Voltage V
CEO
-60 -80 V
Emitter-Base Voltage V
EBO
-4.0 V
Collector Current - Continuous (Note 1) I
C
-500 mA
Power Dissipation (Note 1) P
d
300 mW
Thermal Resistance, Junction to Ambient (Note 1) R θJA 417
°C/W
Operating and Storage Temperature Range T
j
, T
STG
-55 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
MMBTA55
MMBTA56
V (BR)CBO
-60
-80
⎯ V I C = -100
μA, I
E = 0
Collector-Emitter Breakdown Voltage MMBTA55
MMBTA56
V (BR)CEO
-60
-80
⎯ V I C = -1.0mA, I B = 0
Emitter-Base Breakdown Voltage V
(BR)EBO
-4.0 ⎯ V I
E
= -100 μA, I
C
= 0
Collector Cutoff Current MMBTA55
MMBTA56
I CBO
⎯ -100 nA
V
CB
= -60V, I
E
= 0
V CB = -80V, I E = 0
Collector Cutoff Current MMBTA55
MMBTA56
I
CEX
⎯ -100 nA
V
CE
= -60V, I
BO
= 0V
V
CE
= -80V, I
BO
= 0V
ON CHARACTERISTICS (Note 2)
DC Current Gain h
FE
100 ⎯ ⎯
I
C
= -10mA, V
CE
= -1.0V
I
C
= -100mA, V
CE
= -1.0V
Collector-Emitter Saturation Voltage V
CE(SAT)
⎯ -0.25 V I
C
= -100mA, I
B
= -10mA
Base-Emitter Saturation Voltage V BE(SAT)
⎯ -1.2 V I C = -100mA, V CE = -1.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product f T
50 ⎯ MHz
V
CE
= -1.0V, I
C
= -100mA,
f = 100MHz
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead. Halogen and Antimony Free.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
2
O
3
Fire Retardants.
DS30054 Rev. 11 - 2 1 of 3
www.diodes.com
MMBTA55 / MMBTA56
© Diodes Incorporated
Please click here to visit our online spice models database.