Diodes MMDT2227M - Manual (Page 2)

DS30718 Rev. 4 - 2 2 of 4 MMDT2227M
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Electrical Characteristics, 2222A Type (NPN) @ T
A
= 25 ° C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage V
(BR)CBO 75 ¾ V I
C
= 10 m A, I
E
= 0
Collector-Emitter Breakdown Voltage V
(BR)CEO
40 ¾ V I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage V
(BR)EBO 6.0 ¾ V I
E
= 10 m A, I
C
= 0
Collector Cutoff Current I
CBO ¾ 10
nA
m A
V
CB
= 60V, I
E
= 0
V
CB
= 60V, I
E
= 0, T
A
= 150 ° C
Collector Cutoff Current I
CEX ¾ 10 nA V
CE
= 60V, V
EB(OFF)
= 3.0V
Emitter Cutoff Current I
EBO ¾ 10 nA V
EB
= 3.0V, I
C
= 0
Base Cutoff Current I
BL ¾ 20 nA V CE = 60V, V EB(OFF) = 3.0V
ON CHARACTERISTICS (Note 4)
DC Current Gain h
FE
35
50
75
100
40
50
35
¾
¾
¾
300
¾
¾
¾
¾
I
C
= 100 m A, V
CE
= 10V
I
C
= 1.0mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V
I
C
= 150mA, V
CE
= 10V
I
C
= 500mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V, T
A
= -55 ° C
I
C
= 150mA, V
CE
= 1.0V
Collector-Emitter Saturation Voltage V
CE(SAT) ¾
0.3
1.0
V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
Base-Emitter Saturation Voltage V
BE(SAT)
0.6
¾
1.2
2.0
V
I C = 150mA, I B = 15mA
I
C
= 500mA, I
B
= 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance C
obo ¾ 8 pF V CB = 10V, f = 1.0MHz, I E = 0
Input Capacitance C
ibo
— 25 pF V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Current Gain-Bandwidth Product f
T 300 ¾ MHz
V
CE
= 20V, I
C
= 20mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time t
d ¾ 10 ns V
CC
= 30V, I
C
= 150mA,
V
BE(off)
= - 0.5V, I
B1
= 15mA
Rise Time t
r ¾ 25 ns
Storage Time t
s ¾ 225 ns V
CC
= 30V, I
C
= 150mA,
I
B1
= I
B2
= 15mA
Fall Time t
f ¾ 60 ns
Note: 4. Pulse test: Pulse width £ 300 m s, duty cycle £ 2%.