Diodes ZXTP19100CG - Manual (Page 3)

ZXTP19100CG
Issue 1- February 2008 3 www.zetex.com
© Zetex Semiconductors plc 2008
Thermal characteristics
90 100 110 120
1µ
10µ
100µ
1m
100m 1 10 100
10m
100m
1
Safe Operating Area
s ee not e (c )
Si ngl e Pul s e
T
am b
=25° C
V
CE( sat)
Limit ed
100µs
1m s
10m s
100m s
1s DC
Safe Operating Area
-
I
C
C
o
l
l e
c
t
o
r
C
u
r
r
e
n
t
(
A
)
-V
CE
Collector-Emitter Voltage (V)
0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
s ee note (c )
s ee note (b)
s ee note (a)
Derating Curve
Temperature (°C)
M
a
x
P
o
w
e
r
D
i s
s
i p
a
t
i o
n
(
W
)
100µ 1m 10m 100m 1 10 100 1k
0
10
20
30
40 T
am b
=25° C
s ee note (c )
T ransient T hermal Impedance
D=0.5
D=0.2
D=0.1
Si ngl e Pul s e
D=0.05
T
h
e
r
m
a
l
R
e
s
i s
t
a
n
c
e
(
°
C
/
W
)
Pulse W idth (s)
100µ 1m 10m 100m 1 10 100 1k
1
10
100
Si ngl e Pul s e
T
am b
=25° C
s ee note (c )
Pulse Pow er Dissipation
Pulse W idth (s)
M
a
x
i m
u
m
P
o
w
e
r
(
W
)
BV
(BR )CEX
=110V
BV
(BR )CEO
=100V
Fai l ure m ay oc c ur
i n thi s regi on
T
am b
=25° C
-V
CE
Collector-Emitter Voltage (V)
-
I C
C
o
l l
e
c
t
o
r
C
u
r
r
e
n
t
(
A
)