Zxtp2013z – Diodes ZXTP2013Z User Manual
Page 2
ZXTP2013Z
ISSUE 1 - JUNE 2005
2
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-base voltage
BV
CBO
-140
V
Collector-emitter voltage
BV
CEO
-100
V
Emitter-base voltage
BV
EBO
-7
V
Continuous collector current
(a)
I
C
-3.5
A
Peak pulse current
I
CM
-10
A
Power dissipation at T
A
=25°C
(a)
Linear derating factor
P
D
1.5
12
W
mW/°C
Power dissipation at TA=25°C
(b)
Linear derating factor
P
D
2.1
16.8
W
mW/°C
Operating and storage temperature range
T
j
, T
stg
-55 to 150
°C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to ambient
(a)
R
JA
83
°C/W
Junction to ambient
(b)
R
JA
60
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
THERMAL RESISTANCE