Diodes ZXTP2029F - Manual (Page 4)

ZXTP2029F
Issue 3 - May 2007 4 www.zetex.com
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
voltage V
(BR)CBO
-130 -160 V I
C
=-100
μA
Collector-emitter breakdown
voltage V
(BR)CEV
-130 -160 V I
C
=
−1μA, 1V> V
BE
>-0.3V
Collector-emitter breakdown
voltage V
(BR)CEO
-100 -120 V
I
C
=-10mA
(a)
NOTES:
(a) Measured under pulsed conditions. Pulse width=300 ␮S. Duty cycle Յ2%.
Emitter-base breakdown
voltage V
(BR)EBO
-7.0 -8.3 V I
E
=-100
μA
Collector-emitter cut-off
current I
CEV
-20 nA V
CE
=-100V,
V
BE
= 1V
Collector-base cut-off current I
CBO
-20 nA V
CB
=-100V
Emitter-base cut-off current I
EBO
-10 nA V
EB
=-6V
Static forward current
transfer ratio H
FE
100
100
40
220
200
75
300
I
C
=-10mA, V
CE
=-2V
(a)
I
C
=-1A, V
CE
=-2V
(a)
Ic=-3A, V
CE
=-2V
Collector-emitter saturation
voltage V
CE(sat)
-20
-60
-135
-180
-30
-80
-180
-250
mV
mV
mV
mV
I
C
=-100mA, I
B
=-10mA
(a)
I
C
=-1A, I
B
=-100mA
(a)
I
C
=-3A, I
B
=-300mA
(a)
I
C
=-4A, I
B
=-400mA
(a)
Base-emitter saturation
voltage V
BE(sat)
-0.90 -1.00 V
I
C
=-3A, I
B
=-300mA
(a)
Base-emitter turn-on voltage V
BE(on)
-0.81 -0.90 V
I
C
=-3A, V
CE
=-2V
(a)
Transition frequency f
T
150 MHz Ic=-100mA, V
CE
=-10V,
f=50MHz
Output capacitance C
obo
39 pF V
CB
=-10V, f=1MHz
Delay timetime t
(d)
21 ns V
CC
=-10V, I
C
=-1A,
I
B1
=I
B2
=-100mA
Rise time t
(r)
12 ns
Storage time t
(stg)
410 ns
Fall time t
(f)
35 ns