Mmbt5551, Electrical characteristics – Diodes MMBT5551 User Manual
Page 2
MMBT5551
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V
(BR)CBO
180
⎯
V
I
C
= 100
μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
160
⎯
V
I
C
= 1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
6.0
⎯
V
I
E
= 10
μA, I
C
= 0
Collector Cutoff Current
I
CBO
⎯
50
nA
μA
V
CB
= 120V, I
E
= 0
V
CB
= 120V, I
E
= 0, T
A
= 100
°C
Emitter Cutoff Current
I
EBO
⎯
50
nA
V
EB
= 4.0V, I
C
= 0
ON CHARACTERISTICS (Note 4)
DC Current Gain
h
FE
80
80
30
⎯
250
⎯
⎯
I
C
= 1.0mA, V
CE
= 5.0V
I
C
= 10mA, V
CE
= 5.0V
I
C
= 50mA, V
CE
= 5.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
0.15
0.20
V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage
V
BE(SAT)
⎯
1.0
V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯
6.0
pF
V
CB
= 10V, f = 1.0MHz, I
E
= 0
Small Signal Current Gain
h
fe
50
250
⎯
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
f
T
100
300
MHz
V
CE
= 10V, I
C
= 10mA,
f = 100MHz
Noise Figure
nF
⎯
8.0
dB
V
CE
= 5.0V, I
C
= 200
μA,
R
S
= 1.0k
Ω,
f = 1.0kHz
Notes:
4. Short duration pulse test used to minimize self-heating effect.
0
50
100
25
50
75
100
125
150
175
200
P
,
P
O
WE
R
DIS
S
IP
A
T
IO
N (
m
W
)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature
A
150
200
250
300
350
400
0
1
10
1,000
100
1
10
100
h,
D
C
C
U
R
R
E
N
T
G
AI
N
FE
I , COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs. Collector Current
C
V
= 5V
CE
T = 150°C
A
T = 25°C
A
T = -50°C
A
MMBT5551
Document number: DS30061 Rev. 11 - 2
2 of 4
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August 2008
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