Diodes MJD350 User Manual
Mjd350 new prod uc t, Features, Mechanical data
MJD350
Document number: DS31608 Rev. 2 - 2
1 of 4
www.diodes.com
November 2008
© Diodes Incorporated
MJD350
NEW PROD
UC
T
HIGH VOLTAGE PNP SURFACE MOUNT TRANSISTOR
Features
•
Epitaxial Planar Die Construction
• High
Collector-EmitterVoltage
•
Ideally Suited for Automated Assembly Processes
•
Ideal for Power Switching or Amplification Applications
•
Lead Free By Design/RoHS Compliant (Note 1)
•
"Green" Device (Note 2)
Mechanical Data
• Case:
DPAK
•
Case Material: Molded Plastic, "Green" Molding Compound. UL
Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020D
•
Terminals: Finish — Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
•
Marking Information: See Page 3
•
Ordering Information: See Page 3
•
Weight: 0.34 grams (approximate)
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Collector-Base Voltage
V
CBO
-300 V
Collector-Emitter Voltage
V
CEO
-300 V
Emitter-Base Voltage
V
EBO
-3 V
Continuous Collector Current
I
C
-0.5 A
Peak Pulse Collector Current
I
CM
-0.75 A
Thermal Characteristics
Characteristic Symbol
Value
Unit
Power Dissipation @T
C
= 25°C
P
D
15 W
Thermal Resistance, Junction to Case
R
θJC
8.33 °C/W
Power Dissipation @T
A
= 25°C (Note 3)
P
D
1.56 W
Thermal Resistance, Junction to Ambient
R
θJA
81 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max Unit
Test
Condition
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Note 4)
V
(SUS)CEO
-300
⎯
⎯
V
I
C
= -1mA, I
B
= 0
Collector Cutoff Current
I
CBO
⎯
⎯
-100
μA
V
CB
= -300V, I
E
= 0
Emitter Cutoff Current
I
EBO
⎯
⎯
-100
μA
V
EB
= - 3V, I
C
= 0
ON CHARACTERISTICS (Note 4)
DC Current Gain
h
FE
30
⎯
240
⎯
V
CE
= -10V, I
C
= -50mA
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with the minimum pad size recommended.
4. Measured under pulsed conditions. Pulse width = 300
μs. Duty cycle ≤2%.
Top View
Device Schematic
Pin Out Configuration
COLLECTOR
BASE
EMITTER
3
1
2
4