Diodes MMDT5401 - Manual (Page 2)

MMDT5401
Document Number: DS30169 Rev: 10 - 2
2 of 5
www.diodes.com
April 2013
© Diodes Incorporated
MMDT5401
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
(@T A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
-160 V
Collector-Emitter Voltage V
CEO
-150 V
Emitter-Base Voltage V
EBO
-6 V
Continuous Collector Current I
C
-200 mA
Thermal Characteristics
(@T A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation
(Note 5)
P
D
200
mW
(Notes 6 & 7) 320
Thermal Resistance, Junction to Ambient
(Note 5)
R
θJA
625
°C/W (Notes 6 & 7) 390
Thermal Resistance, Junction to Case (Note 8) R
θJC
140
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Electrical Characteristics
(@T A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
-160   V I
C
= -100µA, I
E
= 0
Collector-Emitter Breakdown Voltage (Note 9) BV
CEO
-150   V I
C
= -1mA, I
B
= 0
Emitter-Base Breakdown Voltage BV
EBO
-6   V I
E
= -100µA, I
C
= 0
Collector-Base Cutoff Current I
CBO
  -50 nA V
CB
= -120V, I
E
= 0
  -50 µA V
CB
= -120V, I
E
= 0, T
A
= +100°C
Base-Emitter Cutoff Current I
EBO
  -50 nA V
EB
= -5V, I
C
= 0
ON CHARACTERISTICS (Note 9)
DC Current Gain h
FE
50



I
C
= -1.0mA, V
CE
= -5.0V
60 240 I
C
= -10mA, V
CE
= -5.0V
50  I
C
= -50mA, V
CE
= -5.0V
Collector-Emitter Saturation Voltage V
CE(sat)
 
-0.2
V
I
C
= -10mA, I
B
= -1.0mA
-0.5 I
C
= -50mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage V
BE(sat)
  -1.0 V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
  6.0 pF  V
CB
= -10V, f = 1.0MHz, I
E
= 0
Small Signal Current Gain h
fe
40  200  I
C
= -1mA, V
CE
= -10V, f = 1.0MHz
Current Gain-Bandwidth Product f
T
100  300 MHz I
C
= -10mA, V
CE
= -10V, f = 100MHz
Noise Figure NF   8.0 dB
V
CE
= -5.0V, I
C
= -200µA,
R
S
= 10Ω  f = 1.0kHz
Notes: 5. For a device mounted on minimum recommended pad layout 1oz weight copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
6. Same as Note 5, except the device is mounted 25mm X 25mm 2oz copper.
7. Maximum combined dissipation.
8. Thermal resistance from junction to the top of package.
9. Measured under pulsed conditions. Pulse width
 300µs. Duty cycle  2%.