Diodes MMST5401 - Manual (Page 2)

MMST5401
Document number: DS30170 Rev. 10 - 2
2 of 4
www.diodes.com
May 2014
© Diodes Incorporated
MMST5401
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
-160 V
Collector-Emitter Voltage V
CEO
-150 V
Emitter-Base Voltage V
EBO
-5.0 V
Continuous Collector Current I
C
-200 mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 6) P
D
200 mW
Thermal Resistance, Junction to Ambient (Note 6) R
θJA
625 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
ESD Ratings
(Note 7)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Collector-Base Breakdown Voltage
V
CBO
-160 ⎯ V I
C
= -100 μA, I
E
= 0
Collector-Emitter Breakdown Voltage V
CEO
-150 ⎯ V I
C
= -1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage V
EBO
-5.0 ⎯ V I
E
= -10 μA, I
C
= 0
Collector Cutoff Current I
CBO
⎯ -50
nA
µA V
CB
= -120V, I
E
= 0
V
CB
= -120V, I
E
= 0, T
A
= +100°C
Emitter Cutoff Current I
EBO
⎯ -50 nA V
EB
= -3.0V, I
C
= 0
ON CHARACTERISTICS (Note 8)
DC Current Gain h
FE
50
60
50 ⎯
240
⎯
⎯
I
C
= -1.0mA , V
CE
= -5.0V
I
C
= -10mA, V
CE
= -5.0V
I
C
= -50mA, V
CE
= -5.0V
Collector-Emitter Saturation Voltage V
CE(SAT)
⎯
-0.2
-0.5
V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage V
BE(SAT)
⎯ -1.0 V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯ 6.0 pF V
CB
= -10V, f = 1.0MHz, I
E
= 0
Small Signal Current Gain h
fe
40 200 ⎯
V
CE
= -10V, I
C
= -1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product f
T
100 300 MHz
V
CE
= -10V, I
C
= -10mA,
f = 100MHz
Noise Figure NF ⎯ 8.0 dB
V
CE
= -5.0V, I
C
= -200µA,
R
S
=10Ω, f = 1.0kHz
Notes: 6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.