Diodes ZXTP03200BG - Manual (Page 4)

ZXTP03200BG
Electrical Characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-Base Breakdown
Voltage BV
CBO -220 -245 V I
C
= -100
μA
Collector-Emitter Breakdown
Voltage BV
CER -220 -245 V I
C
= -1µA, R
BE
< 1k
Ω
Collector-Emitter Breakdown
voltage BV
CEO -200 -225 V I
C
= -10mA
(*)
Emitter-Base Breakdown
Voltage BV
EBO -7 -8.4 V I
E
= -100
μA
Collector-Base Cut-off
Current I
CBO <1 -50
-0.5
nA
μA V
CB
= -200V
V
CB
= -200V,T
amb
=100˚C
Emitter Cut-off Current I
EBO <1 -10 nA V
EB
= -6V
Collector-Emitter Saturation
Voltage V
CE(sat) -37
-130
-135
-180
-50
-155
-160
-275
mV
mV
mV
mV
I
C
= -0.1A, I
B
= -10mA
(*)
I
C
= -0.5A, I
B
= -25mA
(*)
I
C
= -1A, I
B
= -100mA
(*)
I
C
= -2A, I
B
= -400mA
(*)
Base-Emitter Saturation
Voltage V
BE(sat) -955 -1100 mV I
C
= -2A, I
B
= -400mA
(*)
Base-Emitter Turn-On
Voltage V
BE(on) -860 -1000 mV I
C
= -2A, V
CE
= -5V
(*)
Static Forward Current
Transfer Ratio h
FE 100
100
20
195
170
50
5
300
I
C
= -10mA, V
CE
= -5V
(*)
I
C
= -1A, V
CE
= -5V
(*)
I
C
= -2A, V
CE
= -5V
(*)
I
C
= -5A, V
CE
= -5V
(*)
Transition Frequency f
T
105 MHz I
C
= -100mA, V
CE
= -10V
f = 50MHz
Output Capacitance C
obo 31 pF V
CB
= -10V,f = 1MHz
(*)
Delay Time t
d 21 ns
Rise Time t
r 18 ns
Storage Time t
s 680 ns
Fall Time t
f 75 ns
I
C
= -1A, V
CC
= -50V,
I
B1
= -I
B2
= -100mA
NOTES:
(*) Measured under pulsed conditions. Pulse width
≤ 300μs; duty cycle ≤ 2%.
Issue 1 - August 2008 4
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