Diodes ZXTP2014G - Manual (Page 4)

ZXTP2014G
Da
tasheet Number: DS33716 Rev. 2 - 2
4 of 7
www.diodes.com
November 2012
© Diodes Incorporated
ZXTP2014G
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ. Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
-180 -200 - V I
C
= -100µA
Collector-Emitter Breakdown Voltage (Note 9) BV
CER
-180 -200 - V I
C
= -1µA, R
B
≤ 1k Ω
Collector-Emitter Breakdown Voltage (Note 9) BV
CEO
-140 -160 - V I
C
= -1mA
Emitter-Base Breakdown Voltage BV
EBO
-7 -8.3 - V I
E
= -100µA
Collector Cutoff Current I
CBO
-
-
< -1
-
-20
-500
nA
nA V CB = -150V
V
CB
= -150V, T
A
= +100°C
Collector Cutoff Current
I
CER
R ≤ 1k Ω
-
-
< -1
-
-20
-500
nA
nA V
CB
= -150V
V
CB
= -150V, T
A
= +100°C
Emitter Cutoff Current I EBO
- < -1 -10 nA V EB = -6V
DC current transfer Static ratio (Note 9) h
FE
100 225 -
-
I
C
= -10mA, V
CE
= -5V
100 200 300 I
C
= -1A, V
CE
= -5V
45 100 - I
C
= -3A, V
CE
= -5V
- 5 - I
C
= -10A, V
CE
= -5V
Collector-Emitter Saturation Voltage (Note 9) V
CE(sat)
- -40 -60
mV
I
C
= -100mA, I
B
= -5mA
- -55 -80 I
C
= -0.5A, I
B
= -50mA
- -85 -120 I C = -1A, I B = -100mA
- -275 -360 I
C
= -3A, I
B
= -300mA
Base-Emitter Saturation Voltage (Note 9) V
BE(sat)
- -940 -1040 mV I
C
= -3A, I
B
= -300mA
Base-Emitter Turn-on Voltage (Note 9) V BE(on)
- -830 -930 mV I C = -3A, V CE = -5V
Transitional Frequency (Note 9) f
T
- 120 - MHz
I
C
= -100mA, V
CE
= -10V,
f = 50MHz
Output capacitance C obo
- 33 - pF V CB = -10V, f = 1MHz
Switching Time
t
ON
- 42 -
ns
V
CC
= -50V, I
C
= -1A,
I B1 = -I B2 = -100mA t
OFF
- 636 -
Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.