Diodes ZXTP2014Z - Manual (Page 4)

ZXTP2014Z
S E M I C O N D U C T O R S
ISSUE 2 - AUGUST 2005
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage BV
CBO
-180 -200 V I
C
= -100 ␮A
Collector-emitter breakdown voltage BV
CER
-180 -200 V I
C
= -1 ␮A, RB Յ 1k⍀
Collector-emitter breakdown voltage BV
CEO
-140 -160 V I
C
= -10mA*
Emitter-base breakdown voltage BV
EBO
-7.0 -8.0 V I
E
= -100 ␮A
Collector cut-off current I
CBO
Ͻ1 -20
-0.5
nA
␮A
V
CB
= -150V
V
CB
= -150V, T
amb
=100 ЊC
Collector cut-off current I
CER
R Յ1k⍀
Ͻ1 -20
-0.5
nA
␮A
V
CB
= -150V
V
CB
= -150V, T
amb
=100 ЊC
Emitter cut-off current I
EBO
Ͻ1 -10 nA V
EB
= -6V
Collector-emitter saturation voltage V
CE(SAT)
-37
-50
-80
-255
-60
-75
-115
-330
mV
mV
mV
mV
I
C
= -0.1A, I
B
= -5mA*
I
C
= -0.5A, I
B
= -50mA*
I
C
= -1A, I
B
= -100mA*
I
C
= -3A, I
B
= -300mA*
Base-emitter saturation voltage V
BE(SAT)
-910 -1010 mV I
C
= -3A, I
B
= -300mA*
Base-emitter turn on voltage V
BE(ON)
-800 -900 mV I
C
= -3A, V
CE
= -5V*
Static forward current transfer ratio h
FE
100
100
45
225
200
100
5
300
I
C
= -10mA, V
CE
= -5V*
I
C
= -1A, V
CE
= -5V*
I
C
= -3A, V
CE
= -5V*
I
C
= -10A, V
CE
= -5V*
Transition frequency f
T
120 MHz I
C
= -100mA, V
CE
= -10V
f=50MHz
Output capacitance C
OBO
33 pF V
CB
= -10V, f= 1MHz*
Switching times t
ON
t
OFF
42
636
ns I
C
= -1A, V
CC
= -50V,
I
B1
= -I
B2
= -100mA
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
* Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ 2%.