Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXTP25140BFH User Manual
Page 4
ZXTP25140BFH
© Zetex Semiconductors plc 2006
Electrical characteristics (at T
AMB
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base
breakdown voltage
BV
CBO
-180
-205
V
I
C
= -100
A
Collector-emitter
breakdown voltage
(forward blocking)
BV
CEX,
-180
-205
V
I
C
= -100
A,
R
BE
Յ 1k⍀ or
-0.25V < V
BE
< 1V
Collector-emitter
breakdown voltage (base
open)
BV
CEO
-140
-160
V
I
C
= -10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
Յ
300
s; duty cycle
Յ
2%.
Emitter-collector
breakdown voltage
(reverse blocking)
BV
ECO
-7
-8.5
V
I
E
= -100uA
Emitter-base breakdown
voltage
BV
EBO
-7
-8.2
V
I
E
= -100
A
Collector cut-off current
I
CBO
<-1
-50
-20
nA
A
V
CB
= -144V
V
CB
= -144V, T
AMB
= 100°C
Collector emitter cut-off
current
I
CEX
-
-100
nA
V
CE
= -144V;
R
BE
Յ 1k⍀ or
-0.25V < V
BE
< 1V
Emitter cut-off current
I
EBO
<-1
-50
nA
V
EB
= -5.6V
Collector-emitter
saturation voltage
V
ce(sat)
-40
-50
mV
I
C
= -0.1A, I
B
= -10mA
-110
-135
mV
I
C
= -0.1A, I
B
= -2mA
-90
-110
mV
I
C
= -0.5A, I
B
= -50mA
-170
-230
mV
I
C
= -0.5A, I
B
= -25mA
-180
-260
mV
I
C
= -1A, I
B
= -100mA
Base-emitter saturation
voltage
V
be(sat)
-850
-950
mV
I
C
= -1A, I
B
= -100mA
Base-emitter turn-on
voltage
V
BE(ON)
-800
-900
mV
I
C
= -1A, V
CE
= -2V
Static forward current
transfer ratio
h
FE
100
200
300
I
C
= -10mA, V
CE
= -2V
100
190
I
C
= -0.1A, V
CE
= -2V
20
30
I
C
= -1A, V
CE
= -2V
Transition frequency
f
T
75
MHz
I
C
= -10mA, V
CE
= -20V
f
= 20MHz
Output capacitance
C
OBO
10
pF
V
CB
= -20V, f
= 1MHz
Turn-on time
t
(on)
102
ns
V
CC
= -20V. I
C
= -100mA,
I
B1
= I
B2
= -10mA
Turn-off time
t
(off)
854
ns