Electrical characteristics, A product line of diodes incorporated – Diodes ZXTP03200BZ User Manual
Page 4
ZXTP03200BZ
Document Number DS31902 Rev. 2 - 2
4 of 7
August 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTP03200BZ
2 0 0 V P N P L O W V
C E ( s a t )
T R A N S I S T O R I N S O T - 8 9
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Collector-Base Breakdown Voltage
V
(BR)CBO
-220 -245
V I
C
= -100µA
Collector-Emitter Breakdown Voltage
V
(BR)CER
-220 -245
V I
C
= -1µA, R
BE
≤ 1kΩ
Collector-Emitter Breakdown Voltage (Note f)
V
(BR)CEO
-220 -225
V I
C
= -10mA
Emitter-Base Breakdown Voltage
V
(BR)EBO
-7 -8.4
V I
E
= -100µA
Collector-Base Cutoff Current
I
CBO
<1
-50
-0.5
nA
µA
V
CB
= -200V
V
CB
= -200V, T
amb
= 100°C
Emitter Cutoff Current
I
EBO
<1
-10
nA
V
EB
= -6V
Static Forward Current Transfer Ratio (Note f)
h
FE
100
100
20
195
179
50
5
300
I
C
= -10mA, V
CE
= -5V
I
C
= -1A, V
CE
= -5V
I
C
= -2A, V
CE
= -5V
I
C
= -5A, V
CE
= -5V
Collector-Emitter Saturation Voltage (Note f)
V
CE(SAT)
-37
-120
-130
-160
-50
-155
-160
-260
mV
mV
mV
mV
I
C
= -100mA, I
B
= -10mA
I
C
= -500mA, I
B
= -25mA
I
C
= -1A, I
B
= -100mA
I
C
= -2A, I
B
= -400mA
Base-Emitter Saturation Voltage (Note f)
V
BE(sat)
-940
-1100
mV
I
C
= -2A, I
B
= -400mV
Base-Emitter Turn-On Voltage (Note f)
V
BE(ON)
-840
-1000
mV
I
C
= -2A, V
CE
= -5V
Output Capacitance (Note f)
C
obo
31 pF
V
CB
= -10V. f = 1MHz
Transition Frequency
f
T
105 MHz
V
CE
= -10V, I
C
= -100mA
f = 50MHz
Delay Time
t
d
21 ns
V
CC
= -50V, I
C
= -1A
I
B1
= -I
B2
= -100mA
Rise Time
t
r
18 ns
Storage Time
T
s
680 ns
Fall Time
T
f
75 ns
Notes:
f. Measured under pulsed conditions. Pulse width = 300 µs. Duty cycle
≤ 2%