Zxtp5401g, Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXTP5401G User Manual
Page 4
ZXTP5401G
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit Conditions
Collector-base breakdown
voltage
BV
CBO
-160
-270
V
I
C
= -100
A,
Collector-emitter breakdown
voltage (base open)
BV
CEO
-150
-240
V
I
C
= -1mA *
Emitter-base breakdown
voltage
BV
EBO
-5
-8.1
V
I
E
= -10
A
Collector cut-off current
I
CBO
<-1
-50
nA
V
CB
= -120V
-50
A V
CB
= -120V, T
amb
= 100°C
Collector-emitter saturation
voltage
V
CE(sat)
-50
-200
mV
I
C
= -10mA, I
B
= -1mA *
-70
-500
mV
I
C
= -50mA, I
B
= -5mA *
Base-emitter saturation
voltage
V
BE(sat)
-700
-1000
mV
I
C
= -10mA, I
B
= -1mA *
-750
-1000
mV
I
C
= -50mA, I
B
= -5mA *
Static forward current transfer
ratio
h
FE
50
135
I
C
= -1mA, V
CE
= -5V *
60
135
240
I
C
= -10mA, V
CE
= -5V *
50
130
I
C
= -50mA, V
CE
= -5V *
Transition frequency
f
T
100
MHz I
C
= -10mA, V
CE
= -10V
f
= 100MHz
Output capacitance
C
OBO
6
pF
V
CB
= -10V, f
= 1MHz *
Delay time
t
(d)
386
ns
V
CC
= -50V. I
C
= -100mA,
I
B1
= I
B2
= -10mA.
Rise time
t
(r)
202
ns
Storage time
t
(s)
1720
ns
Fall time
t
(f)
275
ns