Diodes ZXTP5401FL - Manual (Page 2)

ZXTP5401FL
Document Number: DS33724 Rev. 2 - 2
2 of 6
www.diodes.com
June 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTP5401FL
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
-160 V
Collector-Emitter Voltage V
CEO
-150 V
Emitter-Base Voltage V EBO
-5 V
Continuous Collector Current I
C
-600 mA
Peak Pulse Current I
CM
-1 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector Power Dissipation
(Note 5)
P D
310
mW
(Note 6) 350
Thermal Resistance, Junction to Ambient
(Note 5)
R θJA
403
°C/W
(Note 6) 357
Thermal Resistance, Junction to Leads (Note 7) R θJL 350 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Notes: 5. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper in still air condition;
6. Same as Note 5, expect the device is mounted on 15mm X 15mm X 1.6mm FR4 PCB
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
0 25 50 75 100 125 150
0.0
0.1
0.2
0.3
0.4
Derating Curve
Temperature (°C)
M
a
x P
o
w
e
r
D
issi
p
a
ti
o
n
(W
)
100µ 1m 10m 100m 1 10 100 1k
0
50
100
150
200
250
300
350
400
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
T
h
e
rm
a
l R
e
si
st
a
n
ce
(
°C
/W
)
Pulse Width (s)
10m 100m 1 10 100 1k
0.1
1
10
Single Pulse. T
amb
=25°C
Pulse Power Dissipation
Pulse Width (s)
M
a
x
P
o
we
r Di
s
si
p
at
io
n
(W)