Zxtr2012z, Absolute maximum ratings, Maximum current at v – Diodes ZXTR2012Z User Manual

Page 2: Thermal characteristics, Esd ratings

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ZXTR2012Z

Document number: DS36330 Rev. 1 – 2

2 of 7

www.diodes.com

December 2013

© Diodes Incorporated

ZXTR2012Z

A Product Line of

Diodes Incorporated


Absolute Maximum Ratings

(Voltage relative to GND, @T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Unit

Input Supply Voltage

V

IN

-0.3 to 100

V

Continuous Input & Output Current

I

IN,

I

OUT

550 mA

Peak Pulsed Input & Output Current

I

IM,

I

OM

2 A

Maximum Voltage applied to V

OUT

V

OUT(max)

18 V




Maximum Current at V

IN

= 48V

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Unit

Continuous Output Current

(Note 7)

I

OUT

47 mA

Pulsed Output Current

(Note 8)

I

OM

880

mA

(Note 9)

180




Thermal Characteristics

Characteristic Symbol

Value

Unit

Power Dissipation

(Note 5)

P

D

1.7

W

(Note 6)

0.89

Thermal Resistance, Junction to Ambient

(Note 5)

R

θJA

59

°C/W

(Note 6)

112

Thermal Resistance, Junction to Lead

(Note 10)

R

θJL

20

Thermal Resistance, Junction to Case

(Note 10)

R

θJC

15.7

Recommended Operating Junction Temperature Range

T

J

-40 to +125

C

Maximum Operating Junction and Storage Temperature Range

T

J

, T

STG

-65 to +150




ESD Ratings

(Note 11)

Characteristics Symbols

Value

Unit

JEDEC

Class

Electrostatic Discharge – Human Body Model

ESD HBM

4000

V

3A

Electrostatic Discharge – Machine Model

ESD MM

400

V

C

Notes:

5. For a device mounted with the exposed V

IN

pad on 50mm x 50mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still

air conditions whilst operating in steady-state.

6. Same as note 5, except mounted on 15mm x 15mm 1oz copper.

7. Same as note 5, whilst operating at V

IN

= 48V. Refer to Safe Operating Area for other Input Voltages.

8. Same as note 5, except measured with a single pulse width = 100µs and V

IN

= 48V.

9. Same as note 5, except measured with a single pulse width = 10ms and V

IN

= 48V.

10.

R

θJL

= Thermal resistance from junction to solder-point (on the exposed V

IN

pad).

R

θJC

= Thermal resistance from junction to the top of case.

11. Refer to JEDEC specification JESD22-A114 and JESD22-A115

.


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