Diodes MMST6427 - Manual (Page 2)

MMST6427
Document number: DS30166 Rev. 11 - 2
2 of 5
www.diodes.com
August 2011
© Diodes Incorporated
MMST6427
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V CBO
40 V
Collector-Emitter Voltage V CEO
40 V
Emitter-Base Voltage V
EBO
12 V
Collector Current - Continuous (Note 4) I
C
500 mA
Power Dissipation (Note 4) P
d
200 mW
Thermal Resistance, Junction to Ambient (Note 4) R θJA 625 °C/W
Operating and Storage Temperature Range T
j
, T
STG
-55 to +150 °C
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
BV
CBO
40 ⎯ V I
C
= 100 μA, I
E
= 0
Collector-Emitter Breakdown Voltage BV
CEO
40
⎯
V I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage BV
EBO
12 ⎯ V I
E
= 10
μA, I
C
= 0
Collector Cutoff Current I
CBO
⎯ 50 nA V
CB
= 30V, I
E
= 0
Collector Cutoff Current I
CEO
⎯ 1.0 μA V
CE
= 25V, I
B
= 0
Emitter Cutoff Current I
EBO
⎯ 50 nA V
EB
= 10V, I
C
= 0
ON CHARACTERISTICS (Note 5)
DC Current Gain h
FE
10,000
20,000
14,000 100,000
200,000
140,000
⎯
I
C
= 10mA, V
CE
= 5.0V
I
C
= 100mA, V
CE
= 5.0V
I
C
= 500mA, V
CE
= 5.0V
Collector-Emitter Saturation Voltage V
CE(sat)
⎯
1.2
1.5
V
I
C
= 50mA, I
B
= 0.5mA
I
C
= 500mA, I
B
= 0.5mA
Base-Emitter Saturation Voltage V
BE(sat)
⎯ 2.0 V I
C
= 500mA, I
B
= 0.5mA
Base-Emitter On Voltage V
BE(on)
⎯ 1.75 V I
C
= 50mA, V
CE
=5.0V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
8.0 Typical pF V
CB
= 10V, f = 1.0MHz, I
E
= 0
Input Capacitance C
ibo
15 Typical pF V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Notes: 4. Device mounted on 25mm x 22 mm x 1.6mm FR4 PCB, 1oz copper, singled sided
5. Short duration pulse test used to minimize self-heating effect.