Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXTP05120HFF User Manual
Page 4
ZXTP05120HFF
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown
voltage
BV
CBO
-140
-170
V
I
C
= -100
A
Collector-emitter breakdown
voltage (base open)
BV
CEO
-120
-140
V
I
C
= -10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
Յ300s; duty cycle Յ2%.
Emitter-base breakdown
voltage
BV
EBO
-10
-16
V
I
E
= -100
A
Collector-base cut-off current I
CBO
<-1
-100
nA V
CB
= -120V
-10
A V
CB
= -120V, T
amb
= 100°C
Collector-emitter cut-off
current
I
CES
<-0.1
-10
A V
CB
= -120V
Emitter-base cut-off current
I
EBO
<-1
-100
nA
V
EB
= -8V
Collector-emitter saturation
voltage
V
CE(sat)
-0.77
-0.9
V
I
C
= 250mA, I
B
= 0.25mA
-0.9
-1.1
V
I
C
= -1A, I
B
= -1mA
-1.3
-2.0
V
I
C
= -2A, I
B
= -2mA
Base-emitter saturation
voltage
V
BE(sat)
-1.5
-1.7
V
I
C
= -1A, I
B
= -1mA
Base-emitter turn-on voltage
V
BE(on)
-1.4
-1.7
V
I
C
= -1A, V
CE
= -5V
Static forward current
transfer ratio
h
FE
3K
14k
I
C
= -50mA, V
CE
= -5V
3K
11k
I
C
= -500mA, V
CE
= -5V
3K
10k
30K
I
C
= -1A, V
CE
= -5V
2K
8k
I
C
= -2A, V
CE
= -5V
Transition frequency
f
T
150
MHz I
C
= -100mA, V
CE
= -10V
f
= 20MHz
Output capacitance
C
ibo
67
90
pF
V
EB
= -0.5V, f
= 1MHz
Output capacitance
C
obo
22
40
pF
V
CB
= -10V, f
= 1MHz
Delay time
t
d
556
ns
V
CC
= -10V.
I
C
= -0.5A,
I
B1
= I
B2
= -0.5mA.
Rise time
t
r
212
ns
Storage time
t
s
681
ns
Fall time
t
f
304
ns