Diodes MMBF170 - Manual (Page 2)

MMBF170
Document number: DS30104 Rev. 14 - 2
2 of 5
www.diodes.com
May 2014
© Diodes Incorporated
MMBF170
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
60 V
Drain-Gate Voltage R
GS
 1.0MΩ V
DGR
60 V
Gate-Source Voltage Continuous
Pulsed
V
GSS
20
40
V
Drain Current (Note 5) Continuous
Pulsed
I
D
500
800
mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P
D
300
1.80
mW
mW/°C
Thermal Resistance, Junction to Ambient R
θJA
417 K/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
60 70  V V
GS
= 0V, I
D
= 100μA
Zero Gate Voltage Drain Current I
DSS
  1.0 µA V
DS
= 60V, V
GS
= 0V
Gate-Body Leakage I
GSS
  10 nA V
GS
= 15V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
0.8 2.1 3.0 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS (ON)

 
 5.0
5.3
Ω
V
GS
= 10V, I
D
= 200mA
V
GS
= 4.5V, I
D
= 50mA
Forward Transconductance g
FS
80   mS V
DS
=10V, I
D
= 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
 22 40 pF
V
DS
= 10V, V
GS
= 0V, f = 1.0MHz Output Capacitance C
oss
 11 30 pF
Reverse Transfer Capacitance C
rss
 2.0 5.0 pF
SWITCHING CHARACTERISTICS
Turn-On Time
t
on
  10 ns V
DD
= 25V, I
D
= 0.5A,
V
GS
= 10V, R
GEN
= 50Ω Turn-Off Time t
off
  10 ns
Notes: 5. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our
website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.