Pam2306d, Absolute maximum ratings, Recommended operating conditions – Diodes PAM2306D User Manual

Page 3: Thermal information, Electrical characteristics

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PAM2306D

Document number: DSxxxxx Rev. 1 - 1

3 of 12

www.diodes.com

November 2012

© Diodes Incorporated

PAM2306D

A Product Line of

Diodes Incorporated


Absolute Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

These are stress ratings only and functional operation is not implied. Exposure to absolute maximum ratings for prolonged time periods may affect device
reliability. All voltages are with respect to ground.

Parameter Rating

Unit

Input Voltage

-0.3 to +6.5

V

EN1, FB1, LX1, EN2, FB2 and LX2 Pin Voltage

-0.3 to (V

IN

+0.3)

V

Maximum Junction Temperature

150

°C

Storage Temperature Range

-65 to +150

°C

Soldering Temperature

260, 10sec

°C


Recommended Operating Conditions

(@T

A

= +25°C, unless otherwise specified.)

Parameter Rating

Unit

Supply Voltage

2.5 to 5.5

V

Ambient Temperature Range

-40 to +85

°C

Junction Temperature Range

-40 to +125

°C


Thermal Information

Parameter Symbol

Package

Maximum

Unit

Thermal Resistance (Junction to Ambient)

θ

JA

W-DFN3x3-12

60 °C/W

Thermal Resistance (Junction to Case)

θ

JC

W-DFN3x3-12

8.5 °C/W

Power Dissipation

P

D

W-DFN3x3-12

1.66 W


Electrical Characteristics

(@T

A

= +25°C, V

IN

= 3.6V, V

O

= 1.8V, C

IN

= 10µF, C

O

= 10µF, L = 2.2µH, unless otherwise specified.)

Parameter Symbol

Test

Conditions

Min

Typ

Max

Units

Input Voltage Range

V

IN

2.5

5.5

V

Regulated Feedback Voltage

V

FB

0.588

0.6

0.612

V

Reference Voltage Line Regulation

∆V

FB

0.3

%/V

Regulated Output Voltage Accuracy

V

O

I

O

= 10mA

-3 +3

%

Peak Indictor Current

I

PK

V

IN

= 3V, V

FB

= 0.5V or V

O

= 90%

1.5 A

Output Voltage Line Regulation

LNR

V

IN

= 2.5V to 5V, I

O

= 10mA

0.2

0.5

%/V

Output Voltage Load Regulation

LDR

I

O

= 1mA to 1A

1.5 %

Quiescent Current (per channel)

I

Q

No load

40

70

µA

Shutdown Current (per channel)

I

SD

V

EN

= 0V

0.1 1 µA

Oscillator Frequency

f

OSC

V

O

= 100%

1.2 1.5 1.8 MHz

V

FB

= 0V or V

O

= 0V

500 kHz

Drain-Source On-State Resistance

R

DS(ON)

I

DS

= 100mA

P MOSFET

0.30

0.45

N MOSFET

0.35

0.50

SW Leakage Current (per channel)

I

LSW

±0.01

1

µA

EN Threshold High

V

EH

1.5

V

EN Threshold Low

V

EL

0.3

V

EN Leakage Current

I

EN

±0.01

µA

Over Temperature Protection

OTP

150

°C

OTP Hysteresis

OTH

30

°C




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