Diodes PAM8006A - Manual (Page 4)

PAM8006A
Document number: DSxxxxx Rev. 1 - 0
4 of 13
www.diodes.com
April 2013
© Diodes Incorporated
PAM8006A
A Product Line of
Diodes Incorporated
Recommended Operating Conditions
(@T
A
= +25°C, unless otherwise specified.)
Parameter Rating Unit
Supply Voltage V
CC
8 to 18 V
Input Pin Voltage 0 to 5.5 V
High Level Input Voltage: SD 2.0 to V
CC
V
MUTE 2.0 to 5.5 V
Low Level Input Voltage: SD 0 to 0.3 V
MUTE 0 to 0.3 V
Ambient Operating Temperature -20 to +85 °C
Thermal Information
Parameter Package Symbol Maximum Unit
Thermal Resisitance
(Junction to Case)
QFN5x5-32L θ
JC
5.0
°C/W
Thermal Resistance
(Junction to Ambient)
QFN5x5-32L θ
JA
16.1
The exposed PAD must be soldered to a thermal land on the PCB.
Electrical Characteristics
(@T
A
= +25°C, V
CC
= 12V, R
L
=8Ω, unless otherwise specified.)
Symbol Parameter Conditions Min Typ Max Units
P
O
Continuous Output Power
THD+N = 0.12%, f = 1kHz, R
L
= 8Ω 6
W THD+N = 1%, f = 1kHz, R
L
= 8Ω 8.5
THD+N = 10%, f = 1kHz, R
L
= 8Ω 10
I
DD
Quiescent Current (No Load) 16.5 25 mA
I
SD
Supply Quiescent Current in Shutdown
Mode
Shutdown = 0V 4 10 µA
R
DS(ON)
Drain-Source On-State Resisitance
I
O
= 0.5A
T
J
= +25°C
High Side 210
mΩ Low Side 210
Total 420
PSRR Power Supply Ripple Rejection Ratio
1V
PP
Ripple, f = 1kHz,
Inputs AC-Coupled to Ground
-65 dB
f
OSC
Oscillator frequency 300 kHz
Vn Output Integrated Noise Floor 20Hz to 22kHz, A-Weighting -100 dB
CS Crosstalk P
O
= 3W, R
L
= 8Ω, f = 1kHz -95 dB
SNR Signal to Noise Ratio
Maximum Output at THD+N < 0.5%,
f = 1kHz
90 dB
Gain 32 dB
|V
OS
|
Output Offset Voltage
(measured differentially)
INN and INP Connected Together 30 mV
V2P5 2.5V Bias Voltage No Load 2.5 V
AVDD Internal Analog Supply Voltage V
CC
= 8V to 26V 5 5.5 V
OTS Over Temperature Shutdown 160 °C
OTH Thermal Hysteresis 50 °C