Diodes PAM8008 - Manual (Page 4)

PAM8008
Document number: DSxxxxx Rev. 1 - 0
4 of 14
www.diodes.com
October 2012
© Diodes Incorporated
PAM8008
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, V
DD
= 5V, Gain = Maximum, R
L
= 8Ω, unless otherwise specified.)
Parameter Symbol Test Conditions Min Typ Max Units
Supply Voltage Range V
DD
2.5 5.5 V
Quiescent Current I
Q
No Load 8 mA
Output Offset Voltage V
OS
No Load 10 mV
Drain-Source On-State Resistance R
DS(ON)
I
DS
= 0.5A
P MOSFET 0.31
Ω
N MOSFET 0.21
Output Power P
O
THD+N = 1%
f = 1kHz R
L
= 8Ω 1.4
W
R
L
= 4Ω 2.4
Total Harmonic Distortion Plus Noise THD+N
R
L
= 8Ω, P
O
= 0.85W, f = 1KHz 0.08
%
R
L
= 4Ω, P
O
= 1.75, f = 1KHz 0.08
Power Supply Ripple Rejection PSRR Input AC-GND, f = 1KHz, V
PP
= 200mV 70 dB
Channel Separation CS P
O
= 1W, f = 1KHz -95 dB
Oscillator Frequency f
OSC
200 250 300 kHz
Efficiency η
P
O
= 1.1W, f =1 kHz, R
L
= 8Ω 87 %
P
O
= 2.4W, f =1 kHz, R
L
= 4Ω 83 %
Noise V
N
Input AC-GND
A-Weighting 60
µV
No A-Weighting 80
Signal Noise Ratio SNR f = 20 - 20kHz, THD = 1% 95 dB
Turn-On Time T
ON
V
DD
= 5V, C
BYP
= 1µF 1.2 S
Mute Current I
MUTE
MUTE = V
DD
4 10 mA
Shutdown Current I
SD
V
SD
= 0V 1 µA
Logic Input High V
IH
1.4
V
Logic Input Low V
IL
0.6
Over Temperature Protection OTP 150 °C
Over Temperature Hysteresis OTH 40 °C