Pam8007, Thermal information, Electrical characteristics – Diodes PAM8007 User Manual

Page 4

Advertising
background image

PAM8007

Document number: DSxxxxx Rev. 1 - 2

4 of 17

www.diodes.com

October 2012

© Diodes Incorporated

PAM8007

A Product Line of

Diodes Incorporated


Thermal Information


Parameter Package

Symbol

Max

Unit

Thermal Resistance (Junction to Ambient)

SSOP-24

θ

JA

90

°C/W

SOP-24 79.2

Thermal Resistance (Junction to Case)

SSOP-24

θ

JC

32

SOP-24 27


Electrical Characteristics

(@T

A

= +25°C, V

DD

= 5V, Gain = 24dB, R

L

= 8Ω, unless otherwise specified.)

Parameter Symbol Test

Conditions Min

Typ

Max

Units

Class D Stage
Supply Voltage Range

V

DD

2.5 5.5 V

Quiescent Current

I

Q

No Load

12

16

mA

Output Offset Voltage

V

OS

No Load

10

50

mV

Drain-Source On-State Resistance

R

DS(ON)

I

DS

= 0.5A

P

MOSFET

0.23

N

MOSFET

0.17

Output Power

P

O

THD+N = 10%
f = 1kHz

R

L

= 8Ω

1.55 1.75

W

R

L

= 4Ω

2.85 3.1

THD+N

R

L

= 8Ω, P

O

= 1W, f = 1KHz

0.12

%

Total Harmonic Distortion Plus Noise

R

L

= 4Ω, P

O

= 2W, f = 1KHz

0.15

Power Supply Ripple Rejection

PSRR

Input AC-GND, f = 1KHz, V

PP

= 200mV

63 dB

Channel Separation

CS

V

O

= 1V

RMS

, f = 1KHz

-88 dB

Oscillator Frequency

f

OSC

200 250 300 kHz

Efficiency

η

P

O

= 1.75W, f =1 kHz, R

L

= 8Ω

85 92 %

P

O

= 3.0W, f =1 kHz, R

L

= 4Ω

80 88 %

Noise

V

N

Input AC-GND
Gain = 12dB

A-Weighting

65

µV

No A-Weighting

90

Signal Noise Ratio

SNR

f = 20 – 20kHz, THD = 1%

84 dB

Earphone Stage

Output Power

P

O

THD+N = 1%, R

L

= 32Ω, f = 1kHz

69 mW

Total Harmonic Distortion Plus Noise

THD+N

R

L

= 32Ω, P

O

= 10mW, f = 1kHz

0.04 %

Power Supply Ripple Rejection

PSRR

Input AC-GND,

f = 1kHz, V

PP

= 200mV

73 dB

Channel Separation

CS

V

O

= 1V

RMS

, f = 1kHz

95 dB

Noise

V

N

Input
AC-GND

A-Weighting

19

µV

No A-Weighting

25

Signal Noise Ratio

SNR

f = 20 – 20kHz, THD = 1%

97 dB

Control Section

Mute Current

I

MUTE

V

MUTE

= 0V

8

12

mA

Shutdown Current

I

SHDN

V

SHDN

= 0V

20

µA

SHDN Input High

V

SH

1.5

V

SHDN Input Low

V

SL

0.4

MUTE Input High

V

MH

1.5

V

MUTE Input Low

V

ML

0.4

Line/Ear Input High

V

DH

2.5

V

Line/Ear Input Low

V

DL

0.4

Over Temperature Protection

OTP

150 °C

Over Temperature Hysteresis

OTH

30 °C



Advertising