Pam8010, Thermal information, Electrical characteristics – Diodes PAM8010 User Manual

Page 4

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PAM8010

Document number: DSxxxxx Rev. 1 - 0

4 of 17

www.diodes.com

November 2012

© Diodes Incorporated

PAM8010

A Product Line of

Diodes Incorporated


Thermal Information


Parameter Package

Symbol

Max

Unit

Thermal Resistance (Junction to Ambient)

SSOP-24

θ

JA

96

°C/W

SOP-24 79.2



Electrical Characteristics

(@T

A

= +25°C, V

DD

= 5V, Gain = Maximum, RL = 8Ω, unless otherwise specified.)

Parameter Symbol Test

Conditions Min

Typ

Max

Units

Class D Stage
Supply Voltage Range

V

DD

2.5 5.5 V

Quiescent Current

I

Q

No Load

10

15

mA

Output Offset Voltage

V

OS

No Load

10

30

mV

Drain-Source On-State Resistance

R

DS(ON)

I

DS

= 0.5A

P

MOSFET

0.21

N

MOSFET

0.17

Output Power

P

O

THD+N = 10%
f = 1kHz

R

L

= 8Ω

1.55 1.70

W

R

L

= 4Ω

2.85 3.0

Total Harmonic Distortion Plus Noise

THD+N

R

L

= 8Ω, P

O

= 0.85W, f = 1KHz

0.08

%

R

L

= 4Ω, P

O

= 1.75W, f = 1KHz

0.08

Power Supply Ripple Rejection

PSRR

Input AC-GND, f = 1KHz, V

PP

= 200mV

70 dB

Channel Separation

CS

P

O

= 1W, f = 1KHz

-95 dB

Oscillator Frequency

f

OSC

200 250 300 kHz

Efficiency

η

P

O

= 1.7W, f =1 kHz, R

L

= 8Ω

85 90 %

P

O

= 3.0W, f =1 kHz, R

L

= 4Ω

80 83 %

Noise

V

N

Input AC-GND

A-Weighting

60

µV

No A-Weighting

80

Signal Noise Ratio

SNR

f = 20 – 20kHz, THD = 1%

95 dB

Earphone Stage

Output Offset Voltage

V

OS

No Load

2.45 2.50 2.55 V

Output Power

P

O

THD+N = 1%, R

L

= 32Ω, f = 1KHz

60 mW

Total Harmonic Distortion Plus Noise

THD+N

R

L

= 32Ω, P

O

= 10mW, f = 1kHz

0.02 %

Power Supply Ripple Rejection

PSRR

Input AC-GND,

f = 1kHz, V

PP

= 200mV

80 dB

Channel Separation

CS

V

O

= 1V

RMS

, f = 1kHz

-95 dB

Noise

V

N

Input
AC-GND

A-Weighting

20

µV

No A-Weighting

35

Signal Noise Ratio

SNR

f = 20 – 20kHz, THD = 1%

95 dB

Control Section

Mute Current

I

MUTE

MUTE_D = V

DD

, MUTE_AB = GND

7

10

mA

Mute Class-D Earphone Current

I

MUTE_D

MUTE_D = V

DD

, MUTE_AB = GND

7

10

mA

Mute Class AB EarphoneCurrent

I

MUTE_AB

MUTE_D = V

DD

, MUTE_AB = GND

9

10

mA

Shutdown Current

I

SHDN

V

SHDN

= 0V

1

µA

Logic Input High

V

IH

1.4

V

Logic Input Low

V

IL

0.6

Over Temperature Protection

OTP

150 °C

Over Temperature Hysteresis

OTH

40 °C





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