Diodes PAM8304 - Manual (Page 3)

PAM8304
Document number: DS36589 Rev. 1 - 2
3 of 11
www.diodes.com
October 2013
© Diodes Incorporated
PAM8304
NEW PROD
UC
T
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@ TA=25°C, VDD=5V, Gain=18dB, RL=L(33μH)+R+L(33μH), unless otherwise noted. )
Symbol Parameter Test Conditions Min Typ Max Unit
VDD Supply Voltage 2.8 6.0 V
Po Output Power
THD+N = 10%, f = 1kHz,
R = 4Ω
VDD = 5.0V 3.0
W VDD = 3.6V 1.5
VDD = 3.2V 1.2
THD+N = 1%, f = 1kHz,
R = 4Ω
VDD = 5.0V 2.4
W VDD = 3.6V 1.25
VDD = 3.2V 1.0
THD+N = 10%, f = 1kHz,
R = 8Ω
VDD = 5.0V 1.75
W VDD = 3.6V 0.90
VDD = 3.2V 0.70
THD+N = 1%, f = 1kHz,
R = 8Ω
VDD = 5.0V 1.40
W VDD = 3.6V 0.72
VDD = 3.2V 0.60
THD+N
Total Harmonic
Distortion Plus
Noise
VDD = 5.0V, Po = 1W, R = 8Ω
f = 1kHz
0.17
% VDD = 3.6V, Po = 0.1W, R = 8Ω 0.16
VDD = 3.2V, Po =0.1W, R = 8Ω 0.14
VDD = 5.0V, Po = 0.5W, R = 4Ω
f = 1kHz
0.14
% VDD = 3.6V, Po = 0.2W, R = 4Ω 0.16
VDD = 3.2V, Po = 0.1W, R = 4Ω 0.17
PSRR
Power Supply Ripple
Rejection VDD = 3.6V, Inputs ac-grounded
with C = 1μF
f=217Hz -68
dB f=1kHz -70
f=10kHz -67
Dyn Dynamic Range VDD = 5V,THD = %, R = 8Ω f=1kHz 95 dB
Vn Output Noise Inputs ac-grounded
No A
weighting
170
μV
A-weighting 130
η Efficiency
RL = 8Ω,THD = 10%
f=1kHz
93
%
RL = 4Ω,THD = 10% 86
IQ Quiescent Current VDD = 5V No Load 5 mA
Isd Shutdown Current VDD = 2.8V to 5V /SD=0V 1 μA
Rdson
Static Drain-to Source On-
state Resistor High Side PMOS,I = 500mA VDD=5.0V 325 mΩ
Low Side NMOS,I = 500mA VDD=5.0V 200 mΩ
fsw Switching Frequency VDD = 2.8V to 5V 400 kHz
Gv Closed-loop Gain VDD = 2.8V to 5V 300K/Rin V/V
Vos Output Offset Voltage Input ac-ground, VDD = 5V 50 mV
VIH SD Input High Voltage VDD = 5V 1.4
V
VIL SD Input Low Voltage VDD = 5V 1.0