Pam8303c, Electrical characteristics – Diodes PAM8303C User Manual

Page 4

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PAM8303C

Document number: DSxxxxx Rev. 1 - 2

4 of 17

www.diodes.com

June 2013

© Diodes Incorporated

PAM8303C

A Product Line of

Diodes Incorporated



Electrical Characteristics

(@T

A

= +25°C, V

DD

= 5V, Gain = 2V/V, R

L

= L(33µH) + R + L(33µH), unless otherwise specified.)


Symbol Parameter

Test

Conditions

Min

Typ

Max

Units

V

DD

Supply Voltage

2.8 5.5 V

P

O

Output Power

THD+N = 10%, f = 1KHz, R = 4

V

DD

= 5.0V

2.85 3.00

W

V

DD

= 3.6V

1.65 1.80

V

DD

= 3.2V

1.20 1.35

THD+N = 1%, f = 1KHz, R = 4

V

DD

= 5.0V

2.50 2.66

W

V

DD

= 3.6V

1.15 1.30

V

DD

= 3.2V

0.85 1.0

THD+N = 10%, f = 1KHz, R = 8

V

DD

= 5.0V

1.65 1.8

W

V

DD

= 3.6V

0.75 0.9

V

DD

= 3.2V

0.55 0.7

THD+N = 1%, f = 1KHz, R = 8

V

DD

= 5.0V

1.3 1.5

W

V

DD

= 3.6V

0.55 0.72

V

DD

= 3.2V

0.40 0.55

THD+N

Total Harmonic Distortion Plus
Noise

V

DD

= 5.0V, P

O

= 1W, R = 8

f = 1kHz

0.28

0.35

%

V

DD

= 3.6V, P

O

= 0.1W, R = 8

0.40

0.45

V

DD

= 3.2V, P

O

= 0.1W, R = 8

0.55

0.60

V

DD

= 5.0V, P

O

= 0.5W, R = 4

f = 1kHz

0.20

0.25

%

V

DD

= 3.6V, P

O

= 0.2W, R = 4

0.35

0.40

V

DD

= 3.2V, P

O

= 0.1W, R = 4

0.5

0.55

PSRR

Power Supply Ripple Rejection

V

DD

= 3.6V, Inputs AC-Grounded

with C

IN

= 1µF

f = 217Hz

-63

-55

dB

f = 1kHz

-62

-55

f = 10kHz

-52

-40

Dyn

Dynamic Range

V

DD

= 5V, THD = 1%, R = 8

f = 1kHz

85

95

V

N

Output Noise

Inputs AC-Grounded

No A-Weighting

50

100

µV

A-Weighting

30

60

CMRR

Common Mode Rejection Ratio

V

IC

= 100m, V

PP

, f =1kHz

40 63 dB

η

Peak Efficiency

R

L

= 8

Ω, THD = 10%

f = 1kHz

85 90

R

L

= 4

Ω, THD = 10%

80 86 %

I

Q

Quiescent Current

V

DD

= 5.0V

R = 8

7.5

10

V

DD

= 3.6V

4.6 7

V

DD

= 3.0V

3.6 5 mA

I

SD

Shutdown Current

V

DD

= 3.0V to 5.0V

V

SD

= 0.3V

0.5 2 µA

R

DS(ON)

Static Drain-to-Source
On-State Resistor

CSP Package, High Side PMOS
plus Low Side NMOS,
I = 500mA

V

DD

= 5.0V

280

350

V

DD

= 3.6V

300

375

V

DD

= 3.0V

325

400

MSOP/DFN package,
High Side PMOS plus
Low Side NMOS, I = 500mA

V

DD

= 5.0V

365

420

V

DD

= 3.6V

385

450

V

DD

= 3.0V

410

500

R

IN

Input Resistance

150 K

f

SW

Switching Frequency

V

DD

= 3V to 5V

200 250 300 KHz

G

V

Closed Loop Gain

V

DD

= 3V to 5V

300k

Ω/R

I

dB

V

OS

Output Offset Voltage

Input AC-Ground, V

DD

= 5V

10

50

mV

V

IH

Enable Input High Voltage

V

DD

= 5V

1.5 V

V

IL

Enable Input Low Voltage

V

DD

= 5V

0.3

V



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