Electrical characteristics, Pam8403, A product line of diodes incorporated – Diodes PAM8403 User Manual

Page 4

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PAM8403

Document number: DSxxxxx Rev. 1 - 4

4 of 11

www.diodes.com

November 2012

© Diodes Incorporated

PAM8403

A Product Line of

Diodes Incorporated



Electrical Characteristics

(@T

A

= +25°C, V

DD

= 5V, Gain = 24dB, R

L

= 8Ω, unless otherwise specified.)


Symbol Parameter

Test

Conditions

Min

Typ

Max

Units

V

DD

Supply

Voltage

2.5 5.5 V

P

O

Output Power

THD+N = 10%, f = 1KHz, R

L

= 4Ω

V

DD

= 5.0V

3.2

W

V

DD

= 3.6V

1.6

V

DD

= 3.2V

1.3

THD+N = 1%, f = 1KHz, R

L

= 4Ω

V

DD

= 5.0V

2.5

W

V

DD

= 3.6V

1.3

V

DD

= 3.2V

0.85

THD+N = 10%, f = 1KHz, R

L

= 8Ω

V

DD

= 5.0V

1.8

W

V

DD

= 3.6V

0.9

V

DD

= 3.2V

0.6

THD+N = 1%, f = 1KHz, R

L

= 8Ω

V

DD

= 5.0V

1.4

W

V

DD

= 3.6V

0.72

V

DD

= 3.2V

0.45

THD+N

Total Harmonic Distortion Plus
Noise

V

DD

= 5.0V, P

O

= 1W, R

L

= 8Ω

f = 1kHz

0.15

%

V

DD

= 3.6V, P

O

= 0.1W, R

L

= 8Ω

0.11

V

DD

= 5.0V, P

O

= 0.5W, R

L

= 4Ω

f = 1kHz

0.15

%

V

DD

= 3.6V, P

O

= 0.2W, R

L

= 4Ω

0.11

G

V

Closed Loop Gain

V

DD

= 3V to 5V

24 dB

PSRR

Power Supply Ripple Rejection

V

DD

= 5.0V, Inputs AC-Grounded

with C

IN

= 0.47µF

f = 100Hz

-59

dB

f = 1kHz

-58

C

S

Crosstalk

V

DD

= 5.0V, P

O

= 0.5W, R

L

= 8Ω,

G

V

= 20db

f = 1kHz

-95 dB

SNR

Signal-to-Noise Ratio

V

DD

= 5.0V, V

ORMS

= 1V, G

V

= 20db

f = 1kHz

80 dB

V

N

Output Noise

V

DD

= 5.0V, Inputs AC-Grounded

with C

IN

= 0.47µF

No A-Weighting

100

µV

A-Weighting

150

Dyn

Dynamic Range

V

DD

= 5.0V, THD = 1%

f = 1kHz

90

dB

η

Efficiency

R

L

= 8Ω, THD = 10%

f = 1kHz

87

%

R

L

= 4Ω, THD = 10%

83

I

Q

Quiescent Current

V

DD

= 5.0V

No Load

16

mA

V

DD

= 3.6V

10

V

DD

= 3.0V

8

I

MUTE

Muting Current

V

DD

= 5.0V

V

MUTE

= 0.3V

3.5 mA

I

SD

Shutdown Current

V

DD

= 2.5V to 5.5V

V

SD

= 0.3V

<

1 µA

R

DS(ON)

Static Drain-to-Source
On-State Resistor

I

DS

= 500mA, V

GS

= 5V

PMOS

180

mΩ

NMOS

140

f

SW

Switching Frequency

V

DD

= 3.0V to 5.0V

260 kHz

V

OS

Output Offset Voltage

V

IN

= 0V, V

DD

= 5.0V

10 mV

V

IH

Enable Input High Voltage

V

DD

= 5.0V

1.5 1.4

V

V

IL

Enable Input Low Voltage

V

DD

= 5.0V

0.7

0.4

V

IH

MUTE Input High Voltage

V

DD

= 5.0V

1.5 1.4

V

V

IL

MUTE Input Low Voltage

V

DD

= 5.0V

0.7

0.4

OTP

Over Temperature Protection

No Load, Junction Temperature

V

DD

= 5.0V

140 V

OTH

Over Temperature Hysterisis

30 V





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