Diodes PAM8403H - Manual (Page 4)

PAM8403H
Document number: DSxxxxx Rev. 1 - 0
4 of 11
www.diodes.com
November 2012
© Diodes Incorporated
PAM8403H
A Product Line of
Diodes Incorporated
Thermal Information
Parameter Package Symbol Max Unit
Thermal Resistance (Junction to Ambient) SOP-16 θ
JA
110
°C/W
Thermal Resistance (Junction to Case) SOP-16 θ
JC
23
Internal Power Dissipation (@ T
A
= +25°C) SOP-16 P
D
90 mW
Note: 1. The maximun output current for SOT23-5 package is limited by internal power dissipation capacity as described in
Application Information here inafter.
Electrical Characteristics
(@T A = +25°C, V DD = 5V, Gain = 24dB, R L = 8 Ω, unless otherwise specified.)
Symbol Parameter Test Conditions Min Typ Max Units
V
IN
Supply Voltage 2.5 5.5 V
P
O
Output Power
THD+N = 10%,f = 1kHz , R
L
= 4 Ω V
DD
= 5.0V 2.85 3.20 W
THD+N =1%, f = 1kHz, R
L
= 4 Ω V
DD
= 5.0V 2.25 2.50 W
THD+N =10%,f = 1kHz, R
L
= 8 Ω V
DD
= 5.0V 1.5 1.8 W
THD+N = 1%, f = 1kHz, R
L
= 8 Ω V
DD
= 5.0V 1.2 1.4 W
THD+N
Total Harmonic Distortion
Plus Noise V
DD
= 5.0V,P
O
= 0.5W, R
L
= 8 Ω f = 1kHz 0.15 0.20 %
V
DD
= 5.0V, P
O
= 1W, R
L
= 4 Ω f = 1kHz 0.15 0.20 %
G V
Gain 23 24 25 dB
PSRR
Power Supply Ripple
Rejection V DD = 5.0V, Inputs AC-grounded with
C
IN
= 0.47 μF
f = 100Hz -59 -50 dB
f = 1kHz -58 -50 dB
C
S
Crosstalk V
DD
= 5V, P
O
= 0.5W, R
L
= 8 Ω, G
V
= 20dB f = 1kHz -95 -80 dB
SNR Signal-to-Noise Ration V
DD
= 5V, V
ORMS
= 1V,G
V
= 20dB f = 1kHz 74 80 dB
V
N
Output Noise
V
DD
= 5V, Inputs AC-Grounded with
C
IN
= 0.47 μF
A-weighting 100 200
No A-weighting 150 300 µV
I
Q
Quiescent Current V
DD
= 5.0V No load 16 20 mA
I
MUTE
Muting Current V
DD
= 5.0V V
MUTE
= 0.3V 8 12 mA
I
SD
Shutdown Current V
DD
= 2.5V to 5.5V V
SD
= 0.3V 20 µA
V
OS
Output Offset Voltage V
IN
= 0V, V
DD
= 5V 10 mV
V
IH
Enable Input High Voltage V
DD
= 5.0V 1.5 V
V
IL
Enable Input LowVoltage V
DD
= 5.0V 0.4 V
V
IH
MUTE Input High Voltage V
DD
= 5.0V 1.5 V
V
IL
MUTE Input Low Voltage V
DD
= 5.0V 0.4 V