Diodes PAM8603M - Manual (Page 4)

PAM8603M
Document number: DSxxxxx Rev. 1 - 1
4 of 14
www.diodes.com
November 2012
© Diodes Incorporated
PAM8603M
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, V
DD
= 5V, Gain = 20dB, unless otherwise specified.)
Symbol Parameter Test Conditions Min Typ Max Units
V
DD
Supply Power 2.8 5.5 V
P
O
Output Power
THD+N = 10%, f = 1kHz, R
L
= 4 Ω
V
DD
= 5.0V 2.85 3.2
W
V
DD
= 3.6V 1.55 1.8
THD+N = 1%, f = 1kHz, R
L
= 4 Ω
V
DD
= 5.0V 2.35 2.6
W
V
DD
= 3.6V 1.25 1.5
THD+N = 10%, f = 1kHz, R
L
= 8 Ω
V
DD
= 5.0V 1.55 1.8
W
V
DD
= 3.6V 0.75 0.9
THD+N = 1%, f = 1kHz, R
L
= 8 Ω
V
DD
= 5.0V 1.15 1.4
W
V
DD
= 3.6V 0.5 0.72
THD+N
Total Harmonic Distortion Plus
Noise
V
DD
= 5.0V, Po = 0.5W, R
L
= 8 Ω
f = 1kHz
0.15 0.3
%
V
DD
= 3.6V, Po = 0.5W, R
L
= 8 Ω 0.11 0.25
V
DD
= 5.0V, Po = 1W, R
L
= 4 Ω
f = 1kHz
0.15 0.3
%
V
DD
= 3.6V, Po = 1W, R
L
= 4 Ω 0.11 0.25
PSRR Power Supply Ripple Rejection V DD = 5.0V, Inputs AC-Grounded
f = 100Hz -59 -50
dB
f = 1kHz -58 -50
C
S
Crosstalk V
DD
= 5.0V, Po = 0.5W, R
L
= 8 Ω, f = 1kHz -58 dB
SNR Signal-to-Noise V
DD
= 5V, V
O_RMS
= 1V, f = 1kHz 85 -95 -80 dB
V
N
Output Noise
V
DD
= 5V, Inputs AC-Grounded with
C IN = 0.47 μF
A-weighting 98 150
µV
No A-weighting 120 300
Dyn Dynamic Range V DD = 5V, THD = 1%, f = 1kHz 90 102 dB
η Efficiency
R L = 8 Ω, THD = 10%
f = 1kHz
85 89
%
R L = 4 Ω, THD = 10% 80 85
I Q
Quiescent Current
V DD = 5.0V
No load
13.5 20
mA
V DD = 3.6V 8.5 15
I MUTE
Muting Current V DD = 5.0V, V MUTE = 0.3V 2.7 5 mA
I
SD
Shutdown Current V
DD
= 2.5V to 5.5V, V
SD
= 0.3V 1 µA
R
DS(ON)
Static Drain-to-Source On-State
Resistor
I
DS
= 500mA,V
GS
= 5V
PMOS 240 500
m Ω
NMOS 180 350
fsw Switching Frequency V
DD
= 3V to 5V 200 260 300 kHz
V
OS
Output Offset Voltage V
IN
= 0V, V
DD
= 5V 10 50 mV
VIH SD/MUTE Input High V
DD
= 5V 1.45
V
VIL SD/MUTE Input Low V
DD
= 5V 0.65
OTP Over Temperature Protection
No Load, Junction Temperature , V DD = 5V
135
°C
OTH Over Temperature Hysterisis 30