Diodes PAM8902 - Manual (Page 4)

PAM8902
Document number: DSxxxxx Rev. 1 - 4
4 of 13
www.diodes.com
November 2012
© Diodes Incorporated
PAM8902
A Product Line of
Diodes Incorporated
Thermal Information
Parameter Package Symbol Max Unit
Thermal Resistance (Junction to Ambient)
CSP
θ
JA
90
°C/W
QFN4x4-16 52
Thermal Resistance (Junction to Case)
CSP
θ
JC
75
QFN4x4-16 30
Electrical Characteristics
(@T
A
= +25°C, V
DD
= 3.6V, C
L
= 1µF, V
SET
Float, unless otherwise specified.)
Parameter Symbol Test Conditions Min Typ Max Units
Input Voltage V
DD
2.5 5.5 V
Quiescent Current I
Q
EN > 1.2V, V
SET
= High 30 48
mA EN > 1.2V, V
SET
= Floating 10 18
EN > 1.2V, V
SET
= GND 5 12
Shutdown Current I
SD
EN = 0V 0.1 1 µA
Wake-Up Time T
WU
EN from Low to High 40 mS
Chip Enable V
EH
1.2
V
Chip Disable V
EL
0.4
GSET/ VSET High V
H
V
DD
-0.5 V
DD
V GSET/ VSET Floating V
F
1 V
DD
-1
GSET/ VSET Low V
L
0 0.5
Under Voltage Lockout Threshold UVLO VDD from High to Low 2.2
V
Under Voltage Lockout Hysteresis UVLO(H) VDD from Low to High 0.2
Thermal Shutdown Threshold OTP 150 °C
Thermal Shutdown Lockout Hysyeresis OTP(H) 30 °C
Boost Converter
Output Voltage
V
O
1 V
SET
= GND, No Load 7.2 8 8.8 V
V
O
2 V
SET
= NC, No Load 10.8 12 13.2 V
V
O
3 V
SET
= AVDD, No Load 16 17.5 19 V
Current Limit C
L
Average Input Current 0.8 A
Lowside MOSFET R
DS(ON)
R
LS
I
O
= 50mA 0.5 Ω
Boost Switching Frequency f
OSCB
1.1 1.5 1.9 MHz
Class D
Class D Amplifier Switching Frequency f
OSCD
Input AC-GND 225 375 475 KHz
Common Mode Reject Ratio CMRR V
IN
= + -100mV, V
DD
= 3.6V 60 dB
Output Offset Voltage V
OS
Output Offset Voltage 5 50 mV
R
DS(ON)
RP
High Side 1.5 Ω
Low Side 0.6 Ω
Closed-Loop Voltage Gain
A
V
1 G
SET
= AVDD, VO = 1V
RMS
25 26 27
A
V
2 G
SET
= NC, VO = 1V
RMS
21 22 23
A
V
3 G
SET
= GND, VO = 1V
RMS
17 18 19 dB
Power Supply Reject Ratio PSRR 200m V
PP
Supply Ripple @ 217Hz 70 dB
Total Harmonic Distortion Plus Noise THD+N V
O
= 5VRMS 0.3 %
Signal to Noise Ratio SNR Input AC Ground, A–Weighting 90 dB