Cypress CY62137EV30 - Manual (Page 12)

CY62137EV30
MoBL
®
Document #: 38-05443 Rev. *B Page 12 of 12
Document History Page
Document Title: CY62137EV30 MoBL
®
2-Mbit (128K x 16) Static RAM
Document Number: 38-05443
REV. ECN NO. Issue Date
Orig. of
Change Description of Change
** 203720 See ECN AJU New Data Sheet
*A 234196 See ECN AJU Changed I
CC
MAX at f=1MHz from 1.7 mA to 2.0 mA
Changed I
CC
TYP from 12 mA (35 ns speed bin) and 10 mA (45 ns speed
bin) to 15 mA and 12 mA respectively
Changed I
CC
MAX from 20 mA (35 ns speed bin) and 15 mA (45 ns speed
bin) to 25 mA and 20 mA respectively
Changed I
SB1
and I
SB2
TYP from 0.6
µA to 0.7 µA
Changed I
SB1
and I
SB2
MAX from 1.5
µA to 2.5 µA
Changed I
CCDR
from 1
µA to 2 µA
Fixed typos on TSOP II pinout:
Pin 18-22: address lines
Pin 23: NC
Added Pb-free information
*B 427817 See ECN NXR Converted from Advanced Information to Final.
Removed 35 ns Speed Bin
Removed “L” version
Changed ball E3 from DNU to NC.
Removed the redundant footnote on DNU.
Moved Product Portfolio from Page # 3 to Page #2.
Changed I
CC
(Max) value from 2 mA to 2.5 mA and I
CC
(Typ) value from
1.5 mA to 2 mA at f=1 MHz
Changed I
CC
(Typ) value from 12 mA to 15 mA at f = f
max
=1/t
RC
Changed I
SB1
and I
SB2
Typ. values from 0.7
µA to 1 µA and Max. values from
2.5
µA to 7 µA.
Changed V
CC
stabilization time in footnote #7 from 100
µs to 200 µs
Changed the AC test load capacitance from 50pF to 30pF on Page# 4
Changed V
DR
from 1.5V to 1V on Page# 4.
Changed I
CCDR
from 2
µA to 3 µA.
Added I
CCDR
typical value.
Corrected t
R
in Data Retention Characteristics from 100
µs to t
RC
ns
Changed t
OHA ,
t
LZCE
and t
LZWE
from 6 ns to 10 ns
Changed t
LZBE
from 6 ns to 5 ns
Changed t
LZOE
from 3 ns to 5 ns
Changed t
HZOE,
t
HZCE,
t
HZBE
and t
HZWE
from 15 ns to 18 ns
Changed t
SCE,
t
AW and
t
BW
from 40 ns to 35 ns
Changed t
PWE
from 30 ns to 35 ns
Changed t
SD
from 20 ns to 25 ns
Updated the Ordering Information table and replaced the Package Name
column with Package Diagram.
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