Maximum ratings, Operating range, Neutron soft error immunity – Cypress CY7C1318CV18-200BZI User Manual

Page 18: Electrical characteristics, Dc electrical characteristics

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CY7C1318CV18
CY7C1320CV18

Document Number: 001-07160 Rev. *F

Page 18 of 26

Maximum Ratings

Exceeding maximum ratings may impair the useful life of the

device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with Power Applied.. –55°C to +125°C
Supply Voltage on V

DD

Relative to GND ........–0.5V to +2.9V

Supply Voltage on V

DDQ

Relative to GND.......–0.5V to +V

DD

DC Applied to Outputs in High-Z .........–0.5V to V

DDQ

+ 0.3V

DC Input Voltage

[11]

............................... –0.5V to V

DD

+ 0.3V

Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage (MIL-STD-883, M 3015).... >2001V
Latch up Current..................................................... >200 mA

Operating Range

Range

Ambient

Temperature (T

A

)

V

DD

[15]

V

DDQ

[15]

Commercial

0°C to +70°C

1.8 ± 0.1V

1.4V to

V

DD

Industrial

–40°C to +85°C

Neutron Soft Error Immunity

Parameter Description

Test

Conditions Typ

Max*

Unit

LSBU

Logical

Single-Bit

Upsets

25°C

320

368

FIT/

Mb

LMBU

Logical

Multi-Bit

Upsets

25°C

0

0.01

FIT/

Mb

SEL

Single Event

Latch up

85°C

0

0.1

FIT/

Dev

* No LMBU or SEL events occurred during testing; this column represents a

statistical

χ

2

, 95% confidence limit calculation. For more details refer to Appli-

cation Note AN 54908 “Accelerated Neutron SER Testing and Calculation of

Terrestrial Failure Rates”

Electrical Characteristics

DC Electrical Characteristics

Over the Operating Range

[12]

Parameter

Description

Test Conditions

Min

Typ

Max

Unit

V

DD

Power Supply Voltage

1.7

1.8

1.9

V

V

DDQ

I/O Supply Voltage

1.4

1.5

V

DD

V

V

OH

Output HIGH Voltage

Note 16

V

DDQ

/2 – 0.12

V

DDQ

/2 + 0.12

V

V

OL

Output LOW Voltage

Note 17

V

DDQ

/2 – 0.12

V

DDQ

/2 + 0.12

V

V

OH(LOW)

Output HIGH Voltage

I

OH

=

−0.1 mA, Nominal Impedance

V

DDQ

– 0.2

V

DDQ

V

V

OL(LOW)

Output LOW Voltage

I

OL

= 0.1 mA, Nominal Impedance

V

SS

0.2

V

V

IH

Input HIGH Voltage

V

REF

+ 0.1

V

DDQ

+ 0.3

V

V

IL

Input LOW Voltage

–0.3

V

REF

– 0.1

V

I

X

Input Leakage Current

GND

≤ V

I

≤ V

DDQ

−5

5

μA

I

OZ

Output Leakage Current

GND

≤ V

I

≤ V

DDQ,

Output Disabled

−5

5

μA

V

REF

Input Reference Voltage

[18]

Typical Value = 0.75V

0.68

0.75

0.95

V

I

DD

[19]

V

DD

Operating Supply

V

DD

= Max,

I

OUT

= 0 mA,

f = f

MAX

= 1/t

CYC

267 MHz (x18)

805

mA

(x36)

855

250 MHz (x18)

730

(x36)

775

200 MHz (x18)

600

(x36)

635

167 MHz (x18)

510

(x36)

540

Notes

15. Power up: assumes a linear ramp from 0V to V

DD

(min) within 200 ms. During this time V

IH

< V

DD

and V

DDQ

< V

DD

.

16. Outputs are impedance controlled. I

OH

= –(V

DDQ

/2)/(RQ/5) for values of 175

Ω < RQ < 350Ω.

17. Outputs are impedance controlled. I

OL

= (V

DDQ

/2)/(RQ/5) for values of 175

Ω < RQ < 350Ω.

18. V

REF

(min) = 0.68V or 0.46V

DDQ

, whichever is larger, V

REF

(max) = 0.95V or 0.54V

DDQ

, whichever is smaller.

19. The operation current is calculated with 50% read cycle and 50% write cycle.

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