Datasheet, Ddr3 sdram, Unbuffered sodimm – Samsung M471B1G73AH0 User Manual

Page 22

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Unbuffered SODIMM

datasheet

DDR3 SDRAM

Rev. 1.0

[ Table 14 ] DDR3-1066 Speed Bins

Speed

DDR3-1066

Units

NOTE

CL-nRCD-nRP

7 - 7 - 7

Parameter

Symbol

min

max

Internal read command to first data

tAA

13.125

20

ns

ACT to internal read or write delay time

tRCD

13.125

-

ns

PRE command period

tRP

13.125

-

ns

ACT to ACT or REF command period

tRC

50.625

-

ns

ACT to PRE command period

tRAS

37.5

9*tREFI

ns

CL = 5

CWL = 5

tCK(AVG)

3.0

3.3

ns

1,2,3,4,5,9,10

CWL = 6

tCK(AVG)

Reserved

ns

4

CL = 6

CWL = 5

tCK(AVG)

2.5

3.3

ns

1,2,3,5

CWL = 6

tCK(AVG)

Reserved

ns

1,2,3,4

CL = 7

CWL = 5

tCK(AVG)

Reserved

ns

4

CWL = 6

tCK(AVG)

1.875

<2.5

ns

1,2,3,4,8

CL = 8

CWL = 5

tCK(AVG)

Reserved

ns

4

CWL = 6

tCK(AVG)

1.875

<2.5

ns

1,2,3

Supported CL Settings

5, 6,7,8

nCK

Supported CWL Settings

5,6

nCK

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