Datasheet, Ddr3 sdram, Unbuffered sodimm – Samsung M471B1G73AH0 User Manual
Page 24
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Unbuffered SODIMM
datasheet
DDR3 SDRAM
Rev. 1.0
[ Table 16 ] DDR3-1600 Speed Bins
Speed
DDR3-1600
Units
NOTE
CL-nRCD-nRP
11-11-11
Parameter
Symbol
min
max
Internal read command to first data
tAA
13.75
(13.125)
8
20
ns
ACT to internal read or write delay time
tRCD
13.75
(13.125)
8
-
ns
PRE command period
tRP
13.75
(13.125)
8
-
ns
ACT to ACT or REF command period
tRC
48.75
(48.125)
8
-
ns
ACT to PRE command period
tRAS
35
9*tREFI
ns
CL = 5
CWL = 5
tCK(AVG)
3.0
3.3
ns
1,2,3,4,7,9,10
CWL = 6,7,8
tCK(AVG)
Reserved
ns
4
CL = 6
CWL = 5
tCK(AVG)
2.5
3.3
ns
1,2,3,7
CWL = 6
tCK(AVG)
Reserved
ns
1,2,3,4,7
CWL = 7, 8
tCK(AVG)
Reserved
ns
4
CL = 7
CWL = 5
tCK(AVG)
Reserved
ns
4
CWL = 6
tCK(AVG)
1.875
<2.5
ns
1,2,3,4,7
CWL = 7
tCK(AVG)
Reserved
ns
1,2,3,4,7
CWL = 8
tCK(AVG)
Reserved
ns
4
CL = 8
CWL = 5
tCK(AVG)
Reserved
ns
4
CWL = 6
tCK(AVG)
1.875
<2.5
ns
1,2,3,7
CWL = 7
tCK(AVG)
Reserved
ns
1,2,3,4,7
CWL = 8
tCK(AVG)
Reserved
ns
1,2,3,4
CL = 9
CWL = 5,6
tCK(AVG)
Reserved
ns
4
CWL = 7
tCK(AVG)
1.5
<1.875
ns
1,2,3,4,7
CWL = 8
tCK(AVG)
Reserved
ns
1,2,3,4
CL = 10
CWL = 5,6
tCK(AVG)
Reserved
ns
4
CWL = 7
tCK(AVG)
1.5
<1.875
ns
1,2,3,7
CWL = 8
tCK(AVG)
Reserved
ns
1,2,3,4
CL = 11
CWL = 5,6,7
tCK(AVG)
Reserved
ns
4
CWL = 8
tCK(AVG)
1.25
<1.5
ns
1,2,3,8
Supported CL Settings
5,6,7,8,9,10,11
nCK
Supported CWL Settings
5,6,7,8
nCK