Datasheet, Ddr3 sdram, Unbuffered sodimm – Samsung M471B1G73AH0 User Manual

Page 27: Rev. 1.0

Advertising
background image

- 27 -

Unbuffered SODIMM

datasheet

DDR3 SDRAM

Rev. 1.0

[ Table 17 ] Timing Parameters by Speed Bin (Cont.)

Speed

DDR3-800

DDR3-1066

DDR3-1333

DDR3-1600

Units

NOTE

Parameter

Symbol

MIN

MAX

MIN

MAX

MIN

MAX

MIN

MAX

Command and Address Timing

DLL locking time

tDLLK

512

-

512

-

512

-

512

-

nCK

internal READ Command to PRECHARGE Command
delay

tRTP

max

(4nCK,7.5ns

)

-

max

(4nCK,7.5ns)

-

max

(4nCK,7.5ns)

-

max

(4nCK,7.5ns)

-

e

Delay from start of internal write transaction to internal
read command

tWTR

max

(4nCK,7.5ns

)

-

max

(4nCK,7.5ns)

-

max

(4nCK,7.5ns)

-

max

(4nCK,7.5ns)

-

e,18

WRITE recovery time

tWR

15

-

15

-

15

-

15

-

ns

e

Mode Register Set command cycle time

tMRD

4

-

4

-

4

-

4

-

nCK

Mode Register Set command update delay

tMOD

max

(12nCK,15n

s)

-

max

(12nCK,15ns

)

-

max

(12nCK,15ns

)

-

max

(12nCK,15ns)

-

CAS# to CAS# command delay

tCCD

4

-

4

-

4

-

4

-

nCK

Auto precharge write recovery + precharge time

tDAL(min)

WR + roundup (tRP / tCK(AVG))

nCK

Multi-Purpose Register Recovery Time

tMPRR

1

-

1

-

1

-

1

-

nCK

22

ACTIVE to PRECHARGE command period

tRAS

See “Speed Bins and CL, tRCD, tRP, tRC and tRAS for corresponding Bin” on page 42

ns

e

ACTIVE to ACTIVE command period for 1KB page size

tRRD

max

(4nCK,10ns)

-

max

(4nCK,7.5ns)

-

max

(4nCK,6ns)

-

max

(4nCK,6ns)

-

e

ACTIVE to ACTIVE command period for 2KB page size

tRRD

max

(4nCK,10ns)

-

max

(4nCK,10ns)

-

max

(4nCK,7.5ns)

-

max

(4nCK,7.5ns)

-

e

Four activate window for 1KB page size

tFAW

40

-

37.5

-

30

-

30

-

ns

e

Four activate window for 2KB page size

tFAW

50

-

50

-

45

-

40

-

ns

e

Command and Address setup time to CK, CK referenced
to V

IH

(AC) / V

IL

(AC) levels

tIS(base)

AC175

200

-

125

-

65

-

45

-

ps

b,16

tIS(base)

AC150

200 + 150

-

125 + 150

-

65+125

-

45+125

-

ps

b,16,27

Command and Address hold time from CK, CK refer-
enced to V

IH

(AC) / V

IL

(AC) levels

tIH(base)

DC100

275

-

200

-

140

-

120

-

ps

b,16

Control & Address Input pulse width for each input

tIPW

900

-

780

-

620

-

560

-

ps

28

Calibration Timing

Power-up and RESET calibration time

tZQinitI

512

-

512

-

512

-

512

-

nCK

Normal operation Full calibration time

tZQoper

256

-

256

-

256

-

256

-

nCK

Normal operation short calibration time

tZQCS

64

-

64

-

64

-

64

-

nCK

23

Reset Timing

Exit Reset from CKE HIGH to a valid command

tXPR

max(5nCK,

tRFC +

10ns)

-

max(5nCK,

tRFC + 10ns)

-

max(5nCK,

tRFC + 10ns)

-

max(5nCK,

tRFC + 10ns)

-

Self Refresh Timing

Exit Self Refresh to commands not requiring a locked
DLL

tXS

max(5nCK,t

RFC + 10ns)

-

max(5nCK,tR

FC + 10ns)

-

max(5nCK,tR

FC + 10ns)

-

max(5nCK,tR

FC + 10ns)

-

Exit Self Refresh to commands requiring a locked DLL

tXSDLL

tDLLK(min)

-

tDLLK(min)

-

tDLLK(min)

-

tDLLK(min)

-

nCK

Minimum CKE low width for Self refresh entry to exit tim-
ing

tCKESR

tCKE(min) +

1tCK

-

tCKE(min) +

1tCK

-

tCKE(min) +

1tCK

-

tCKE(min) +

1tCK

-

Valid Clock Requirement after Self Refresh Entry (SRE)
or Power-Down Entry (PDE)

tCKSRE

max(5nCK,

10ns)

-

max(5nCK,

10ns)

-

max(5nCK,

10ns)

-

max(5nCK,

10ns)

-

Valid Clock Requirement before Self Refresh Exit (SRX)
or Power-Down Exit (PDX) or Reset Exit

tCKSRX

max(5nCK,

10ns)

-

max(5nCK,

10ns)

-

max(5nCK,

10ns)

-

max(5nCK,

10ns)

-

Advertising