Renesas 4514 - Manual (Page 102)

4513/4514 Group User’s Manual
HARDWARE
1-89
Fig. 52 Flow of writing and test of the product shipped in blank
Fig. 51 PROM memory map
(1) PROM mode
The built-in PROM version has a PROM mode in addition to a nor-
mal operation mode. The PROM mode is used to write to and read
from the built-in PROM.
In the PROM mode, the programming adapter can be used with a
general-purpose PROM programmer to write to or read from the
built-in PROM as if it were M5M27C256K. Programming adapters
are listed in Table 26.Contact addresses at the end of this sheet for
the appropriate PROM programmer.
• Writing and reading of built-in PROM
Programming voltage is 12.5 V. Write the program in the PROM
of the built-in PROM version as shown in Figure 51.
(2) Notes on handling
➀ A high-voltage is used for writing. Take care that overvoltage is
not applied. Take care especially at turning on the power.
➁ For the One Time PROM version shipped in blank, Mitsubishi
Electric corp. does not perform PROM writing test and screening
in the assembly process and following processes. In order to im-
prove reliability after writing, performing writing and test
according to the flow shown in Figure 52 before using is recom-
mended (Products shipped in blank: PROM contents is not
written in factory when shipped).
Table 26 Programming adapters
Microcomputer
M34513E4SP
M34513E4FP, M34513E8FP
M34514E8FP
Programming adapter
PCA7442SP
PCA7442FP
PCA7441
Address
0000
16
1FFF
16
4000
16
5FFF
16
7FFF
16
1 1 1 D
4
D
3
D
2
D
1
D
0
High-order 5 bits
1 1 1 D
4
D
3
D
2
D
1
D
0
Low-order 5 bits
Set “FF 16 ” to the shaded area.
Writing with PROM programmer
Screening (Leave at 150 °C for 40 hours) (Note)
Verify test with PROM programmer
Function test in target device
Since the screening temperature is higher
than storage temperature, never expose the
microcomputer to 150 °C exceeding 100
hours. Note:
BUILT-IN PROM VERSIONS