C&H Technology VS-GB100TH120U - Manual (Page 4)

VS-GB100TH120U
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Vishay Semiconductors
Revision: 20-Sep-12 3 Document Number: 93413
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Fig. 1 - IGBT Typical Output Characteristics Fig. 2 - IGBT Typical Transfer Characteristics
DIODE ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Diode forward voltage V
F
I
F
= 100 A
T
C
= 25 °C - 1.82 2.22
V
T
C
= 125 °C - 1.95 -
Diode reverse recovery charge Q
rr
I
F
= 100 A, V
R
= 600 V,

dI
F
/dt = - 1900 A/μs,

V
GE
= - 15 V
T
C
= 25 °C - 5.4 -
μC
T
C
= 125 °C - 11.2 -
Diode peak reverse recovery current I
rr
T
C
= 25 °C - 81 -
A
T
C
= 125 °C - 101 -
Diode reverse recovery energy t
rr
T
C
= 25 °C - 3.45 -
mJ
T
C
= 125 °C - 6.57 -
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Operating junction temperature range T
J
- 40 - 150
°C
Storage temperature range T
Stg
- 40 - 125
Junction to case
IGBT
R
thJC
- - 1.41
°C/W Diode - - 0.225
Case to sink R
thCS
Conductive grease applied - 0.035 -
Mounting torque
Power terminal screw: M5 2.5 to 5.0
Nm
Mounting screw: M6 3.0 to 6.0
Weight 300 g
I C
(A)
V
CE
(V)
0 3.0 1.0 2.0 4.0 5.0
0
50
25
150
100
200
75
175
125
T
J
= 125 °C
T
J
= 25 °C
V
GE
= 15 V
I C
(A)
V
GE
(V)
5 7 10 6 8 11 9
200
60
20
0
140
100
180
40
120
80
160
T
J
= 125 °C
T
J
= 25 °C