Vishay semiconductors – C&H Technology VS-GB100TH120U User Manual
Page 5
VS-GB100TH120U
www.vishay.com
Vishay Semiconductors
Revision: 20-Sep-12
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Document Number: 93413
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Fig. 3 - Switching Loss vs. I
C
Fig. 4 - IGBT Switching Loss vs. R
g
Fig. 5 - RBSOA
Fig. 6 - IGBT Transient Thermal Impedance
E
on
, E
off
(mJ)
I
C
(A)
0
100
200
50
150
0
5
10
15
25
20
V
GE
= ± 15 V
T
J
=
125 °C
R
g
= 5.6
Ω
V
CC
= 600 V
E
on
E
off
E
on
, E
off
(mJ)
R
g
(
Ω)
0
60
10
20
30
40
50
0
5
10
15
25
20
30
35
40
E
off
V
GE
= ± 15 V
T
J
=
125 °C
I
C
= 100 A
V
CC
= 600 V
E
on
V
CE
(V)
I
C
(A)
0
350
700
1050
1400
0
50
100
150
200
250
V
GE
= ± 15 V
T
J
=
125 °C
R
g
= 5.6
Ω
Module
Chip
t (s)
Z
thJC
- Thermal Impedance (K/W)
10
0
10
-1
10
-2
10
-3
10
-1
10
-2
10
-3
10
-4
10
-5
IGBT