Vishay semiconductors – C&H Technology VS-GB90DA120U User Manual
Page 2
VS-GB90DA120U
www.vishay.com
Vishay Semiconductors
Revision: 02-Aug-12
1
Document Number: 94722
For technical questions within your region:
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Insulated Gate Bipolar Transistor
(Ultrafast IGBT), 90 A
FEATURES
• NPT Generation V IGBT technology
• Square RBSOA
• HEXFRED
®
low Q
rr
, low switching energy
• Positive V
CE(on)
temperature coefficient
• Fully isolated package
• Speed 8 kHz to 60 kHz
• Very low internal inductance (
5 nH typical)
• Industry standard outline
• UL approved file E78996
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
Note
(1)
Maximum collector current admitted is 100 A, to do exceed the maximum temperature of terminals
PRODUCT SUMMARY
V
CES
1200 V
I
C
DC
90 A at 90 °C
V
CE(on)
typical at 75 A, 25 °C
3.3 V
SOT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL
TEST
CONDITIONS
MAX.
UNITS
Collector to emitter voltage
V
CES
1200
V
Continuous collector current
I
C
(1)
T
C
= 25 °C
149
A
T
C
= 90 °C
90
Pulsed collector current
I
CM
200
Clamped inductive load current
I
LM
200
Diode continuous forward current
I
F
T
C
= 25 °C
76
T
C
= 90 °C
46
Gate to emitter voltage
V
GE
± 20
V
Power dissipation, IGBT
P
D
T
C
= 25 °C
862
W
T
C
= 90 °C
414
Power dissipation, diode
P
D
T
C
= 25 °C
357
T
C
= 90 °C
171
Isolation voltage
V
ISOL
Any terminal to case, t = 1 min
2500
V