C&H Technology VS-GB90DA120U - Manual (Page 4)

VS-GB90DA120U
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Vishay Semiconductors
Revision: 02-Aug-12 3 Document Number: 94722
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Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
Fig. 2 - Typical Collector to Emitter Current
Output Characteristics of IGBT
Fig. 3 - Allowable Forward Current vs. Case Temperature
Diode Leg
Fig. 4 - Typical Diode Forward Voltage Drop Characteristics
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Maximum junction and storage temperature range T
J
, T
Stg
- 40 - 150 °C
Junction to case thermal resistance
IGBT
R
thJC
- - 0.145
°C/W Diode - - 0.35
Case to sink thermal resistance, flat, greased surface R
thCS
- 0.05 -
Mounting torque, on terminals and heatsink - - 1.3 Nm
Weight - 30 - g
Case style SOT-227
I
C
- Continuous Collector Current (A)
Allowable Case Temperature (°C)
80
100
120
140
160
0
20
40
60
0 20 40 60 80 100 120 140 160
DC
V
CE
- Collector-to-Emitter Voltage (V)
I C
-
Collector
-to-Emitter Curr
ent (A)
100
150
200
0
50
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0
T
J
= 25 °C
T
J
= 125 °C
T
J
= 150 °C
V
GE
= 15 V
I
F
- Continuous Forward Current (A)
Allowable
Case
Temperature
(°C)
80
100
120
140
160
0
20
40
60
0 20 40 60 80 100
V
FM
- Forward Voltage Drop (V)
I F
- Forwar
d
Curr
ent (A)
80
120
160
0
40
0.0 1.0 2.0 3.0 4.0 5.0
T
J
= 125 °C
T
J
= 150 °C
T
J
= 25 °C