C&H Technology VS-GB90DA120U - Manual (Page 5)

VS-GB90DA120U
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Vishay Semiconductors
Revision: 02-Aug-12 4 Document Number: 94722
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Fig. 5 - Typical IGBT Transfer Characteristics
Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current
Fig. 7 - Typical IGBT Threshold Voltage
Fig. 8 - Typical IGBT Collector to Emitter Voltage vs. Junction
Temperature, V
GE
= 15 V
Fig. 9 - Typical IGBT Energy Losses vs. I
C
T
J
= 125 °C, L = 500 μH, V
CC
= 600 V,
R
g
= 5
, V
GE
= 15 V, Diode used HFA16PB120
Fig. 10 - Typical IGBT Switching Time vs. I
C
T
J
= 125 °C, L = 500 μH, V
CC
= 600 V,
R
g
= 5 , V
GE
= 15 V, Diode used HFA16PB120
V
GE
- Gate-to-Emitter Voltage (V)
I C
-
Collector
-to-Emitter Curr
ent (A)
40
50
60
70
80
90
100
0
10
20
30
4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
T
J
= 25 °C
T
J
= 125 °C
V
CES
- Collector-to-Emitter Voltage (V)
I CE
S
-
Collector
-to-Emitter Curr
e
nt (A)
0.01
0.1
1
10
100
0.0001
0.001
0 200 400 600 800 1000 1200
T
J
= 25 °C
T
J
= 125 °C
T
J
= 150 °C
V
G
E(th)
Thr
eshol
d
V
o
ltage (V)
I
C
(A)
3.5
4
4.5
5
5.5
6
2
2.5
3
0.20 0.40 0.60 0.80 1.00
T
J
= 25 °C
T
J
= 125 °C
T
J
- Junction Temperature (°C)
V
CE
-
Collector
-to-Emitter V
o
ltage (V)
2
2.5
3
3.5
4
4.5
5
1
1.5
0 20 40 60 80 100 120 140 160
I
C
= 100 A
I
C
= 75 A
I
C
= 50 A
I
C
= 25 A
I
C
- Collector Current (A)
S
witching Energy (mJ)
E
on
E
off
1.5
2
2.5
3
3.5
4
4.5
5
0
0.5
1
10 20 30 40 50 60 70 80 90 100
I
C
- Collector Current (A)
S
witching Time (μs)
0.1
1
0.01
0 20 40 60 80
t
r
t
f
t
d(on)
t
d(off)