C&H Technology VSK.105.. Series - Manual (Page 3)

www.vishay.com For technical questions, contact: [email protected] Document Number: 94628
2 Revision: 08-Dec-08
VSK.105.. Series
Vishay High Power Products ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 105 A
ELECTRICAL SPECIFICATIONS
Notes
(1) I 2 t for time t
x
= I 2 √t x √t
x
(2) Average power = V
T(TO)
x I
T(AV)
+ r
t
x (I
T(RMS)
) 2
(3) 16.7 % x
π x I
AV
< I <
π x I
AV
(4) I > π x I
AV
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
V
RRM
, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
V
DRM
, MAXIMUM REPETITIVE
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
I
RRM,
I
DRM
AT 130 °C
mA
VSK.105
04 400 500 400
20
06 600 700 600
08 800 900 800
10 1000 1100 1000
12 1200 1300 1200
14 1400 1500 1400
16 1600 1700 1600
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current (thyristors) I
T(AV) 180° conduction, half sine wave,
T
C
= 85 °C
105
A
Maximum average forward current (diodes) I
F(AV)
Maximum continuous RMS on-state current,
as AC switch
I
O(RMS)
235
Maximum peak, one-cycle non-repetitive
on-state or forward current
I
TSM
or
I
FSM
t = 10 ms No voltage
reapplied
Sinusoidal
half wave,
initial T
J
= T
J
maximum
2000
t = 8.3 ms 2094
t = 10 ms 100 % V
RRM
reapplied
1682
t = 8.3 ms 1760
Maximum I 2 t for fusing I 2 t
t = 10 ms No voltage
reapplied
Initial T
J
= T
J
maximum
20
kA 2 s
t = 8.3 ms 18.26
t = 10 ms 100 % V
RRM
reapplied
14.14
t = 8.3 ms 12.91
Maximum I 2 √t for fusing I 2 √t (1)
t = 0.1 ms to 10 ms, no voltage reapplied
T
J
= T
J
maximum
200 kA 2 √s
Maximum value or threshold voltage V
T(TO)
(2)
Low level (3)
T
J
= T
J
maximum
0.98
V
High level (4) 1.12
Maximum value of on-state
slope resistance
r
t
(2)
Low level (3)
T
J
= T
J
maximum
2.7
m
Ω
High level (4) 2.34
Maximum peak on-state or forward voltage
V
TM
I
TM
= π x I
T(AV)
T
J
= 25 °C 1.8 V
V
FM
I
FM
= π x I
F(AV)
Maximum non-repetitive rate of rise of
turned on current
dI/dt
T
J
= 25 °C, from 0.67 V
DRM
,
I
TM
= π x I
T(AV)
, I
g
= 500 mA, t
r
< 0.5 µs, t
p
> 6 µs
150 A/µs
Maximum holding current I
H
T
J
= 25 °C, anode supply = 6 V,
resistive load, gate open circuit
250
mA
Maximum latching current I
L
T
J
= 25 °C, anode supply = 6 V, resistive load 400
or
I
(RMS)
I
(RMS)