Vsk.105.. series, Vishay high power products – C&H Technology VSK.105.. Series User Manual

Page 4

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Document Number: 94628

For technical questions, contact: [email protected]

www.vishay.com

Revision: 08-Dec-08

3

VSK.105.. Series

ADD-A-PAK Generation VII Power Modules

Thyristor/Diode and Thyristor/Thyristor, 105 A

Vishay High Power Products

Note
• Table shows the increment of thermal resistance R

thJC

when devices operate at different conduction angles than DC

TRIGGERING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum peak gate power

P

GM

12

W

Maximum average gate power

P

G(AV)

3

Maximum peak gate current

I

GM

3

A

Maximum peak negative gate voltage

- V

GM

10

V

Maximum gate voltage required to trigger

V

GT

T

J

= - 40 °C

Anode supply = 6 V
resistive load

4.0

T

J

= 25 °C

2.5

T

J

= 125 °C

1.7

Maximum gate current required to trigger

I

GT

T

J

= - 40 °C

Anode supply = 6 V
resistive load

270

mA

T

J

= 25 °C

150

T

J

= 125 °C

80

Maximum gate voltage that will not trigger

V

GD

T

J

= 125 °C, rated V

DRM

applied

0.25

V

Maximum gate current that will not trigger

I

GD

T

J

= 125 °C, rated V

DRM

applied

6

mA

BLOCKING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum peak reverse and off-state
leakage current at V

RRM

, V

DRM

I

RRM,

I

DRM

T

J

= 130 °C, gate open circuit

20

mA

RMS insulation voltage

V

INS

50 Hz, 1 s

3500

V

Maximum critical rate of rise of off-state voltage

dV/dt

T

J

= 130 °C, linear to 0.67 V

DRM

1000

V/µs

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Junction operating temperature range

T

J

- 40 to 130

°C

Storage temperature range

T

Stg

Maximum internal thermal resistance,
junction to case per leg

R

thJC

DC operation

0.22

°C/W

Typical thermal resistance,
case to heatsink per module

R

thCS

Mounting surface flat, smooth and greased

0.1

Mounting torque ± 10 %

to heatsink

A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.

4

Nm

busbar

3

Approximate weight

75

g

2.7

oz.

Case style

JEDEC

TO-240AA compatible

ΔR CONDUCTION PER JUNCTION

DEVICES

SINE HALF WAVE CONDUCTION

RECTANGULAR WAVE CONDUCTION

UNITS

180°

120°

90°

60°

30°

180°

120°

90°

60°

30°

VSK.105..

0.04

0.048

0.063

0.085

0.125

0.033

0.052

0.067

0.088

0.127

°C/W

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