Vishay semiconductors – C&H Technology VS-GB50TP120N User Manual
Page 5
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VS-GB50TP120N
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Vishay Semiconductors
Revision: 17-May-13
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Document Number: 94820
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Fig. 5 - RBSOA
Fig. 6 - IGBT Transient Thermal Impedance
Fig. 7 - Diode Forward Characteristics
Fig. 8 - Diode Switching Loss vs. I
C
V
CE
(V)
I
C
(A)
0
15
30
45
60
75
90
105
120
0
250
750
500
1250
1000
1500
V
GE
= ± 15 V
T
J
=
125 °C
R
g
= 15
Ω
I
C
, Module
t (s)
Z
thJC
(K/W)
IGBT
10
0
10
-1
10
-2
10
0
10
1
10
-1
10
-2
10
-3
100
90
80
70
60
50
40
30
20
10
0
0
0.5
1.5
1
2
2.5
3
V
F
(V)
I
C
(A)
25 °C
125 °C
4
3.5
3
2.5
2
1.5
1
0.5
0
0
20
60
40
80
100
I
F
(A)
E (mJ)
V
GE
= - 15 V
T
J
=
125 °C
R
g
= 15
Ω
V
CC
= 600 V
E
rec
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