Vishay semiconductors, Circuit configuration – C&H Technology VS-GB50TP120N User Manual
Page 6
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VS-GB50TP120N
www.vishay.com
Vishay Semiconductors
Revision: 17-May-13
5
Document Number: 94820
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Fig. 9 - Diode Switching Loss vs. R
g
Fig. 10 - Diode Transient Thermal Impedance
CIRCUIT CONFIGURATION
R
g
(
Ω)
3
2.5
2
1.5
1
0.5
0
0
20
60
40
80
100
E (mJ)
E
rec
V
GE
= - 15 V
T
J
=
125 °C
I
C
= 50 A
V
CC
= 600 V
t (s)
Z
thJC
(K/W)
Diode
10
0
10
-1
10
-2
10
0
10
1
10
-1
10
-2
10
-3
1
6
7
3
2
5
4
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95524
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